Breakdown-induced negative charge in ultrathin SiO2 films measured by atomic force microscopy

Applied Physics Letters

Volumn 81, Issue 19, 2002, Pages 3615-3617

  Porti, M ^a   Nafria M ^a   Blum M C ^a   Aymerich, X ^a   Sadewasser, S ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT LIMITS; DIELECTRIC BREAKDOWNS; METAL OXIDE SEMICONDUCTOR; NANO-METER SCALE; NEGATIVE CHARGE; STRUCTURAL DAMAGES; ULTRA-THIN;

ATOMIC FORCE MICROSCOPY; OXIDE FILMS; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS;

LEAKAGE CURRENTS;

EID: 79956045233     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1519357     Document Type: Article

References (15)

1. D. J. DiMaria, E. Cartier, and D. Arnold, J. Appl. Phys. 73, 3367 (1993). jap JAPIAU 0021-8979
2. 2 Interface-4, edited by H. Z. Massoud, I. J. R. Baumvol, M. Hirose, and E. H. Poindexter (The Electrochemical Society, Pennington, NJ, 2000), Vol. 4, pp. 333-344.
3. A. Olbrich, B. Ebersberger, and C. Boit, Appl. Phys. Lett. 73, 3114 (1998). apl APPLAB 0003-6951
4. M. Porti, M. Nafría, X. Aymerich, A. Olbrich, and B. Ebersberger, J. Appl. Phys. 91, 2071 (2002). jap JAPIAU 0021-8979
5. M. Porti, M. C. Blüm, M. Nafría, and X. Aymerich, 40th Annual IEEE International Reliability Physics Symposium Proceedings (IEEE, New York, 2002).
6. Ch. Sommerhalter, Th. Glatzel, Th. W. Matthes, A. Jäger-Waldau, and M. Ch. Lux-Steiner, Appl. Surf. Sci. 157, 263 (2000). asu ASUSEE 0169-4332
7. M. Porti, M. Nafría, M. C. Blüm, X. Aymerich, and S. Sadewasser, to be presented at 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science, 2002.
8. T. Pompl, H. Wurzer, M. Kerber, R. C. W. Wilkins, and I. Eisele, 37th Annual IEEE International Reliability Physics Symposium Proceedings, 23-25 March 1999, San Diego, CA (IEEE, New York, 1999), p. 82.
9. J. W. Hong, S. M. Shin, C. J. Kang, Y. Kuk, and Z. G. Khim, Appl. Phys. Lett. 75, 1760 (1999). apl APPLAB 0003-6951
10. D. J. Dumin, J. R. Maddux, R. S. Scott, and R. Subramoniam, IEEE Trans. Electron Devices 41, 1570 (1994). etd IETDAI 0018-9383
11. R. Rodríguez, M. Nafría, J. Suñé, and X. Aymerich, IEEE Trans. Electron Devices 45, 881 (1998). etd IETDAI 0018-9383
12. P. M. Lenahan, J. J. Mele, R. K. Lowry, and D. Woodbury, J. Non-Cryst. Solids 266, 835 (2000). jnc JNCSBJ 0022-3093
13. P. M. Lenahan, J. J. Mele, J. P. Campbell, A. Y. Kang, R. K. Lowry, D. Woodbury, S. T. Liu, and R. Weimer, 39th Annual IEEE International Reliability Physics Symposium Proceedings, 30 April - 3 May 2001, Orlando, FL (IEEE, New York, 2001), p. 150.
14. G. Bersuker, A. Korkin, Y. Jeon, and H. R. Huff, Appl. Phys. Lett. 80, 832 (2002). apl APPLAB 0003-6951
15. B. P. Linder, J. H. Stathis, R. A. Wachnik, E. Wu, S. A. Cohen, A. Ray, and A. Vayshenker, IEEE Symposium on VLSI Technology (IEEE, New York, 2000), pp. 214-215.