Analysis of Schottky barrier height in small contacts using a thermionic-field emission model

ETRI Journal

Volumn 24, Issue 6, 2002, Pages 455-461

  Jang, Moongyu ^a   Lee, Junghwan ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; IMPURITIES; INTERFACES (COMPUTER);

SCHOTTKY BARRIER HEIGHT; SECONDARY ION MASS SPECTROSCOPY; THERMIONIC-FIELD EMISSION MODEL; TRANSFER MATRIX METHOD; WENTZEL-KRAMER-BRILLOUIN APPROXIMATION;

SCHOTTKY BARRIER DIODES;

EID: 0036928226     PISSN: 12256463     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)

1. Stefan Sassen, Bernd Witzigmann, Claus Wolk, and Hans Brugger, "Barrier Height Engineering on GaAs THz Schottky Diodes by Means of High-Low Doping, InGaAs- and InGaP-Layers," IEEE Trans. Electron Devices, vol. 47, 2000, pp. 24-32.
2. Krishna Shenai and Robert W. Dutton, "Current Transport Mechanisms in Atomically Abrupt Metal-Semiconductor Interfaces," IEEE Trans. Electron Devices, vol. 35, 1988, pp. 468-482.
3. A.Y.C. Yu, "Electron Tunneling and Contact Resistance of Metal-Semiconductor Contact Barriers," Solid-State Electronics, vol. 13, 1970, pp. 239-247.
4. C.Y. Chang, Y.K. Fang, and S.M. Sze, "Specific Contact Resistance of Metal-Semiconductor Barriers," Solid-State Electronics, vol. 14, 1971, pp. 541-550.
5. C.R. Crowell and S.M. Sze, "Current Transport in Metal-Semiconductor Barriers," Solid-State Electronics, vol. 9, 1966, pp. 1035-1048.
6. C.R. Crowell and V.L. Rideout, "Normalized Thermionic-Field (T-F) Emission in Metal-Semiconductor (Schottky) Barriers," Solid-State Electronics, vol. 12, 1969, pp. 89-105.
7. F.A. Padovani and R. Stratton, "Field and Thermionic-Field Emission in Schottky Barriers," Solid-State Electronics, vol. 9, 1966, pp. 695-707.
8. S.M. Sze, Physics of Semiconductor Devices, 2nd ed., New York, Wiley, 1981.
9. M.S. Tyagi, Physics of Schottky Barrier Junctions in Metal Semiconductor Schottky Barrier Junctions and Their Applications, B.L. Sharma, ed., New York, Plenum, 1984, pp. 1-60.
10. M.P. Lepselter and J.M. Andrews, "Ohmic Contacts to Silicon," The Electrochemical Society Symposium Series, New York, 1969, pp. 159-186.
11. S. Wolf, Silicon Processing for the VLSI Era, LATTICE PRESS, 1990.
12. H.D. Barber, "Effective Mass and Intrinsic Concentration in Silicon," Solid-State Electronics, vol. 10, 1967, pp. 1039-1051.
13. 2/n-Si Schottky Contacts," IEEE Trans. Electron Devices, vol. 38, 1991, pp.2033-2035.
14. C.R. Crowell, "Richardson Constant and Tunneling Effective Mass for Thermionic and Thermionic-Field Emission in Schottky Barrier Diodes," Solid-State Electronics, vol. 12, 1969, pp. 55-59.