-
1
-
-
0002713076
-
Origin of the excess capacitance at intimate Schottky contacts
-
Werner J, Levi A F J, Tung R T, et al 1988 Origin of the excess capacitance at intimate Schottky contacts Phys Rev Lett 60 53
-
(1988)
Phys Rev Lett
, vol.60
, Issue.1
, pp. 53
-
-
Werner, J.1
Levi, A.F.J.2
Tung, R.T.3
-
2
-
-
0038619541
-
Origin of the anomalous peak in the forward capacitance-voltage plot of a Schottky barrier diode
-
Chattopadhyay P, Raychaudhuri B 1992 Origin of the anomalous peak in the forward capacitance-voltage plot of a Schottky barrier diode Solid-State Electron 35 875
-
(1992)
Solid-State Electron
, vol.35
, Issue.6
, pp. 875
-
-
Chattopadhyay, P.1
Raychaudhuri, B.2
-
3
-
-
0026897216
-
New technique for the determination of series resistance of Schottky barrier diodes
-
Chattopadhyay P, Raychaudhuri B 1992 New technique for the determination of series resistance of Schottky barrier diodes Solid-State Electron 35 1023
-
(1992)
Solid-State Electron
, vol.35
, Issue.7
, pp. 1023
-
-
Chattopadhyay, P.1
Raychaudhuri, B.2
-
4
-
-
0027575502
-
Frequency dependence of forward capacitance-voltage characteristics of Schottky barrier diodes
-
Chattopadhyay P, Raychaudhuri B 1993 Frequency dependence of forward capacitance-voltage characteristics of Schottky barrier diodes Solid-State Electron 36 605
-
(1993)
Solid-State Electron
, vol.36
, Issue.4
, pp. 605
-
-
Chattopadhyay, P.1
Raychaudhuri, B.2
-
5
-
-
0029325777
-
Capacitance-voltage characteristics of Schottky barrier diode in the presence of deep-level impurities and series resistance
-
Chattopadhyay P, Sanyal S 1995 Capacitance-voltage characteristics of Schottky barrier diode in the presence of deep-level impurities and series resistance Appl Surf Sci 89 205
-
(1995)
Appl Surf Sci
, vol.89
, Issue.2
, pp. 205
-
-
Chattopadhyay, P.1
Sanyal, S.2
-
6
-
-
22644443809
-
The effect of series resistance on capacitance-voltage characteristics of Schottky barrier diodes
-
Sahin B, etin H, Ayyildiz E 2005 The effect of series resistance on capacitance-voltage characteristics of Schottky barrier diodes Solid State Commun 135 490
-
(2005)
Solid State Commun
, vol.135
, Issue.8
, pp. 490
-
-
Sahin, B.1
Etin, H.2
Ayyildiz, E.3
-
7
-
-
64549157556
-
Electrical characterization of Au/n-ZnO Schottky contacts on n-Si. J
-
Aydoan S, inar K, Asil H, et al 2009 Electrical characterization of Au/n-ZnO Schottky contacts on n-Si. J Alloys Compd 476 913
-
(2009)
Alloys Compd
, vol.476
, Issue.1-2
, pp. 913
-
-
Aydoan, S.1
Inar, K.2
Asil, H.3
-
8
-
-
0026171612
-
Numerical simulations of the capacitance of forward-biased Schottky-diodes
-
Hjelmgren H, Kollberg E, Lundgren L 1991 Numerical simulations of the capacitance of forward-biased Schottky-diodes Solid-State Electron 34 587
-
(1991)
Solid-State Electron
, vol.34
, Issue.6
, pp. 587
-
-
Hjelmgren, H.1
Kollberg, E.2
Lundgren, L.3
-
9
-
-
0011715992
-
Studies of tunnel MOS diodes: I. Interface effects in silicon Schottky diodes
-
Card H C, Rhoderick E H 1971 Studies of tunnel MOS diodes: I. Interface effects in silicon Schottky diodes J. Phys D 4 1589
-
(1971)
J. Phys
, vol.4
, Issue.10
, pp. 1589
-
-
Card, H.C.1
Rhoderick, E.H.2
-
10
-
-
0019035682
-
Interfacial layer theory of the Schottky barrier diodes
-
Wu C Y 1980 Interfacial layer theory of the Schottky barrier diodes J. Appl Phys 51 3786
-
(1980)
J. Appl Phys
, vol.51
, Issue.7
, pp. 3786
-
-
Wu, C.Y.1
-
11
-
-
0343982041
-
Extraction of Schottky diode parameters from forward current-voltage characteristics
-
Cheung S K, Cheung N W 1986 Extraction of Schottky diode parameters from forward current-voltage characteristics Appl Phys Lett 49 85
-
(1986)
Appl Phys Lett
, vol.49
, Issue.2
, pp. 85
-
-
Cheung, S.K.1
Cheung, N.W.2
-
12
-
-
0029308376
-
Electrical characterization of metal-oxide-InP tunnel diodes based on current-voltage, admittance and low frequency noise measurements
-
Viktorovitch P, Louis P, Besland M P, et al 1995 Electrical characterization of metal-oxide-InP tunnel diodes based on current-voltage, admittance and low frequency noise measurements Solid-State Electron 38 1035
-
(1995)
Solid-State Electron
, vol.38
, Issue.5
, pp. 1035
-
-
Viktorovitch, P.1
Louis, P.2
Besland, M.P.3
-
13
-
-
60649121937
-
Extraction of electronic parameters of Schottky diode based on an organic semiconductor methyl-red
-
Ahmad Z, Sayyad M 2009 Extraction of electronic parameters of Schottky diode based on an organic semiconductor methyl-red Physica E 41 631
-
(2009)
Physica
, vol.41
, Issue.4
, pp. 631
-
-
Ahmad, Z.1
Sayyad, M.2
-
14
-
-
43049123812
-
Extraction of Schottky diode parameters from current-voltage data for a chemical-vapor-deposited diamond/silicon structure over a wide temperature range
-
Rodrigues A M 2008 Extraction of Schottky diode parameters from current-voltage data for a chemical-vapor-deposited diamond/silicon structure over a wide temperature range J. Appl Phys 103 83708
-
(2008)
J. Appl Phys
, vol.103
, Issue.8
, pp. 083708
-
-
Rodrigues, A.M.1
-
15
-
-
0035156312
-
Extraction of Schottky diode parameters with a bias dependent barrier height
-
Mikhelashvili V, Ainsenstein G, Uzdin R 2001 Extraction of Schottky diode parameters with a bias dependent barrier height Solid-State Electron 45 143
-
(2001)
Solid-State Electron
, vol.45
, Issue.1
, pp. 143
-
-
Mikhelashvili, V.1
Ainsenstein, G.2
Uzdin, R.3
-
17
-
-
0032478435
-
Stability of sulfur-treated n-InP Schottky structures, studied by current-voltage measurements
-
Ahaitouf A, Bath A, Losson E, et al 1998 Stability of sulfur-treated n-InP Schottky structures, studied by current-voltage measurements Mat Sci Eng B 52 208
-
(1998)
Mat Sci Eng
, vol.52
, Issue.2-3
, pp. 208
-
-
Ahaitouf, A.1
Bath, A.2
Losson, E.3
-
18
-
-
0001606937
-
Current-voltage characteristics and interface state density of GaAs Schottky barrier
-
Maeda K, Ikoma H, Sato K, et al 1993 Current-voltage characteristics and interface state density of GaAs Schottky barrier Appl Phys Lett 62 2560
-
(1993)
Appl Phys Lett
, vol.62
, Issue.20
, pp. 2560
-
-
Maeda, K.1
Ikoma, H.2
Sato, K.3
-
19
-
-
18744418886
-
InP Schottky junctions for zero bias detector diodes
-
Horvath Z J, Rakovics V, Szentpali B, et al 2003 InP Schottky junctions for zero bias detector diodes Vacuum 71 113
-
(2003)
Vacuum
, vol.71
, Issue.1-2
, pp. 113
-
-
Horvath, Z.J.1
Rakovics, V.2
Szentpali, B.3
-
20
-
-
35648952279
-
First THz and IR characterization of nanometer-scaled antenna-coupled InGaAs/InP Schottky-diode detectors for room temperature infrared imaging
-
Kazemi H, Shinohara K, Nagy G, et al 2007 First THz and IR characterization of nanometer-scaled antenna-coupled InGaAs/InP Schottky-diode detectors for room temperature infrared imaging Proc SPIE 6542 65421J-1
-
(2007)
Proc SPIE
, vol.6542
-
-
Kazemi, H.1
Shinohara, K.2
Nagy, G.3
-
21
-
-
0041171497
-
Application of Schottky diodes as frequency converters in submillimetre and IR systems
-
Bagayev S N, Bozhkov V G, Zakharyash V F, et al 1998 Application of Schottky diodes as frequency converters in submillimetre and IR systems Quantum Electron 28 542
-
(1998)
Quantum Electron
, vol.28
, Issue.6
, pp. 542
-
-
Bagayev, S.N.1
Bozhkov, V.G.2
Zakharyash, V.F.3
-
22
-
-
0028484110
-
Barrier height enhancement of Pt/n-InP Schottky diodes by P2S5/(NH4)2S solution treatment of the InP surface
-
2S solution treatment of the InP surface Solid-State Electron 37 1461
-
(1994)
Solid-State Electron
, vol.37
, Issue.8
, pp. 1461
-
-
Huang, T.S.1
Fang, R.S.2
-
23
-
-
0019056769
-
InP metal-insulated- semiconductor Schottky contacts using surface oxide layers prepared with bromine water
-
Kamimura K, Suzuki T, Kunioka A 1980 InP metal-insulated- semiconductor Schottky contacts using surface oxide layers prepared with bromine water J. Appl Phys 51 4905
-
(1980)
J. Appl Phys
, vol.51
, Issue.9
, pp. 4905
-
-
Kamimura, K.1
Suzuki, T.2
Kunioka, A.3
-
25
-
-
0000812534
-
High-barrier height metal-insulator-semiconductor diodes on n-InP
-
Lee Y S, Anderson W A 1989 High-barrier height metal-insulator- semiconductor diodes on n-InP J. Appl Phys 65 4051
-
(1989)
J. Appl Phys
, vol.65
, Issue.10
, pp. 4051
-
-
Lee, Y.S.1
Anderson, W.A.2
-
26
-
-
0026882410
-
Parameter extraction from non-ideal C-V characteristics of a Schottky diode with and without inter-facial layer
-
Trt A, Yalcin N, Saglam M 1992 Parameter extraction from non-ideal C-V characteristics of a Schottky diode with and without inter-facial layer Solid-State Electron 35 835
-
(1992)
Solid-State Electron
, vol.35
, Issue.6
, pp. 835
-
-
Trt, A.1
Yalcin, N.2
Saglam, M.3
-
27
-
-
0000052184
-
Influence of thin interfacial silicon oxide layers on the Schottky-barrier behavior of Ti on Si(100)
-
Aboelfotoh M O 1989 Influence of thin interfacial silicon oxide layers on the Schottky-barrier behavior of Ti on Si(100) Phys Rev B 39 5070
-
(1989)
Phys Rev
, vol.39
, Issue.8
, pp. 5070
-
-
Aboelfotoh, M.O.1
-
28
-
-
0034158837
-
On the determination of interface state density in n-InP Schottky structures by current-voltage measurements: Comparison with DLTS results
-
Ahaitouf A, Losson E, Bath A 2000 On the determination of interface state density in n-InP Schottky structures by current-voltage measurements: comparison with DLTS results Solid-State Electron 44 515
-
(2000)
Solid-State Electron
, vol.44
, Issue.3
, pp. 515
-
-
Ahaitouf, A.1
Losson, E.2
Bath, A.3
|