Deep-level defects in MBE-grown GaN-based laser structure

Acta Physica Polonica A

Volumn 112, Issue 2, 2007, Pages 331-337

  Tsarova, T ^a   Wosinski T ^a   Makosa, A ^a   Skierbiszewski, C ^b   Grzegory, I ^b   Perlin, P ^b  

^a INSTITUTE OF PHYSICS   (Poland)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHARGE CARRIERS; ELECTRON ENERGY LEVELS; GALLIUM NITRIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SPECTROSCOPIC ANALYSIS;

BLUE-VIOLET LASER DIODE; CHARGE-CARRIER CAPTURE BEHAVIOURS; DEEP-LEVEL DEFECTS; DEEP-LEVEL TRANSIENT SPECTROSCOPY INVESTIGATIONS; LOGARITHMIC CAPTURE KINETICS; MINORITY-CARRIER TRAP; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; REVERSE-BIAS CONDITIONS;

SEMICONDUCTOR LASERS;

EID: 35248893862     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/APhysPolA.112.331     Document Type: Article

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