Effects of growth temperature on high-quality In 0.2Ga 0.8N layers by plasma-assisted molecular beam epitaxy

Journal of Semiconductors

Volumn 33, Issue 10, 2012, Pages

  Zhang, Dongyan ^a,b   Zheng, Xinhe ^a   Li, Xuefei ^a   Wu, Yuanyuan ^a,b   Wang, Jianfeng ^a   Yang, Hui ^a  

^a SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

InGaN; PA MBE; quality; solar cells

Indexed keywords

AFM; EMISSION INTENSITY; FULL WIDTHS AT HALF MAXIMUMS; GAN TEMPLATE; HIGH QUALITY; INGAN; PA-MBE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ROOM TEMPERATURE; TEMPERATURE INCREASE; X RAY ROCKING CURVE;

EPITAXIAL GROWTH; GALLIUM NITRIDE; IMAGE QUALITY; MOLECULAR BEAM EPITAXY; SOLAR CELLS;

GROWTH TEMPERATURE;

EID: 84867940111     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/33/10/103001     Document Type: Article

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