Compositional instability in strained InGaN epitaxial layers induced by kinetic effects

Journal of Applied Physics

Volumn 110, Issue 6, 2011, Pages

  Huang, Yong ^a,b   Melton, Andrew ^b   Jampana, Balakrishnam ^c   Jamil, Muhammad ^b   Ryou, Jae Hyun ^a,b   Dupuis, Russell D ^a,b,d   Ferguson, Ian T ^b,e  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c UNIVERSITY OF DELAWARE   (United States)

^d Georgia Institute of Technology   (United States)

^e University of North Carolina at Charlotte   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITIONAL INSTABILITY; COMPRESSIVE STRAIN; COUPLED EFFECT; CRYSTALLINE QUALITY; GAN TEMPLATE; GROWTH CONDITIONS; HETEROEPITAXIAL LAYERS; KINETIC EFFECT; MG-DOPING; MOLE FRACTION; ROUGH SURFACES; SINGLE LAYER; SMOOTH SURFACE; STRAIN INHOMOGENEITY;

EPITAXIAL GROWTH; EPITAXIAL LAYERS; GALLIUM NITRIDE; INDIUM; KINETIC THEORY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY;

SURFACE MORPHOLOGY;

EID: 80053544725     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3626434     Document Type: Article

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