Crystalline perfection of GaN and AlN epitaxial layers and the main features of structural transformation of crystalline defects

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 246-250

  Faleev, Nikolai ^a   Honsberg, Christiana ^a   Jani, Omkar ^b   Ferguson, Ian ^b  

^a UNIVERSITY OF DELAWARE   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

A1. Characterization; A1. Defects; A1. High resolution X ray diffraction; B1. Nitrides

Indexed keywords

ALUMINUM COMPOUNDS; CRYSTAL GROWTH; EPITAXIAL GROWTH; NUCLEATION; RELAXATION PROCESSES; STRAIN;

DISLOCATION DENSITY; ELASTIC STRAIN; EPITAXIAL LAYERS; STRUCTURAL TRANSFORMATION;

GALLIUM NITRIDE;

EID: 33847283889     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.016     Document Type: Article

References (28)

1. Frank F.C., and Van der Merwe J.H. Proc. Roy. Soc. A 189 (1949) 205
2. Van der Merwe J.H. In: Francombe M.H., and Sato H. (Eds). Single Crystal Films (1964), Pergamon, Oxford 139
3. Matthews J.W. J. Vac. Sci. Technol. 12 1 (1975) 126
4. Matthews J.W., and Blakeslee A.E. J. Crystal Growth 32 (1976) 265 (and references herein)
5. Shilkrot L.E., Srolovitz D.J., and Tersoff J. Phys. Rev. B 62 (2000) 8397 (and references herein)
6. Chernov A.A. Modern Crystallography III, Crystal Growth (1984), Springer, Berlin, Heidelberg, New York, Tokyo (Chapters 1, 2)
7. Morkoc H., Strite S., Gao G.B., Lin M.E., Sverdlov B., and Burns M. J. Appl. Phys. 76 (1994) 1363
8. Jain S.C., Willander M., Narayan J., and Van Overstraeten R. J. Appl. Phys. 87 (2000) 965
9. Pearton S.J., Zolper J.C., Shul R.J., and Ren F. J. Appl. Phys. 86 (1999) 1
10. Ponce F.A., Krusor B.S., Major Jr. J.S., Plano W.E., and Welch D.F. Appl. Phys. Lett. 67 (1995) 410
11. Darakchieva V., Birch J., Schubert M., Paskova T., Tungasmita S., Wagner G., Kasic A., and Monemar B. Phys. Rev. B 70 (2004) 045411
12. Marchand H., Zhao L., Zhang N., Moran B., Coffie R., Mishra U.K., Speck J.S., DenBaars S.P., and Freitas J.A. J. Appl. Phys. 89 (2001) 7846 (and references therein)
13. Heinke H., Kirchner V., Selke H., Chierchia R., Ebel R., Einfeldt S., and Hommel D. J. Phys. D 34 (2001) A25
14. Melnik Yu.V., Nikitina I.P., Zubrilov A.S., Sitnikova A.A., Musikhin Yu.G., and Dmitriev V.A. Inst. Phys. Conf. Ser. 142 (1996) 863 (Chapter 5)
15. Lu H., Schaff W.J., Hwang J., Wu H., Koley G., and Eastman L.F. Appl. Phys. Lett. 79 (2001) 1489
16. Holy V., Pietsch U., and Baumbach T. High Resolution X-Ray Scattering from Thin Films and Multilayers, Springer Tracts in Modern Physics vol. 149 (1999), Springer, Berlin
17. Bowen D.K., and Tanner B.K. High Resolution X-ray Diffraction and Topography (1998), Tailor & Francis, London
18. Gay P., Hirsch P.B., and Kelly A. Acta Metall. 1 (1953) 315
19. Ayers J.E. J. Crystal Growth 135 (1994) 71
20. Kaganer V.M., Kohler R., Schmidbauer M., Opitz R., and Jenischen B. Phys. Rev. B 55 (1997) 1793
21. Faleev N., Temkin H., Ahmad I., Holtz M., and Melnik Yu. J. Appl. Phys. 98 (2005) 123508
22. Sasaoka C., Sunakawa H., Kimura A., Nido M., Usui A., and Sakai A. J. Crystal Growth 189/190 (1998) 61
23. Ning X.J., Chien F.R., Pirouz P., Yang J.W., and Khan M.A. J. Mater. Res. 11 3 (1996) 580
24. Gurevich S.A., Ekimov A.I., Kudryavtsev I.A., Lyublinskaya O.G., Osinskii A.V., Usikov A.S., and Faleev N.N. Semiconductors 28 (1994) 486 (and references herein)
25. N. Faleev, H. Lu, W.J. Schaff, J. Appl. Phys. submitted for publication.
26. Miceli P.F., and Palmstrom C.J. Phys. Rev. B 51 (1995) 5506
27. Izumi A., Tsutsui K., Sokolov N.S., Faleev N.N., Gastev S.V., Novikov S.V., and Yakovlev N.L. J. Crystal Growth 150 (1995) 1115
28. Zhang J.P., Asif Khan M., Sun W.H., Wang H.M., Chen C.Q., Fareed Q., Kuokstis E., and Yang J.W. Appl. Phys. Lett. 81 (2002) 4392