Characterisation of the optical properties of InGaN MQW structures using a combined SEM and CL spectral mapping system

Journal of Semiconductors

Volumn 32, Issue 1, 2011, Pages

  Lockrey, Mark N ^a   Phillips, Matthew R ^a  

^a UNIVERSITY OF TECHNOLOGY SYDNEY   (Australia)

Author keywords

Cathodoluminescence; Electron beam irradiation; InGaN GaN quantum wells; Spectral mapping

Indexed keywords

CHARACTERISATION; ELECTRON BEAM IRRADIATION; INGAN/GAN MULTI-QUANTUM WELL; INGAN/GAN QUANTUM WELL; INHOMOGENEITIES; LOW ENERGY ELECTRON BEAMS; MULTIQUANTUM WELLS; SCANNING ELECTRON MICROSCOPE; SEM; SPATIALLY RESOLVED; SPECTRAL MAPPINGS;

CARRIER CONCENTRATION; CATHODOLUMINESCENCE; CHEMICAL MODIFICATION; ELECTRON BEAMS; ELECTRON OPTICS; ELECTRONS; IRRADIATION; OPTICAL PROPERTIES; PHOTOMAPPING; SCANNING ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79951624683     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/32/1/012001     Document Type: Article

References (3)

1. Jeong M S, Kim J Y, Kim Y W, et al. Spatially resolved photolu-minescence in InGaN/GaN quantum wells by near-field scanning optical micro (Pubitemid 32784731)
2. Siegle H, Thurian P, Eckey L, et al. Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface. Appl Phys Lett, 1996, 68: 1265
3. Kim M H. Schubert M F, Dai Q, et al. Origin of efficiency drop in GaN-based light-emitting diodes. Appl Phys Lett, 2007, 91: 183507