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Journal of Electronic Materials

Volumn 30, Issue 2, 2001, Pages 99-102

Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD

(5) Kim, Dong Joon a Moon, Yong Tae a Song, Keun Man a Lee, In Hwan a Park, Seong Ju a

a Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; PRESSURE EFFECTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

INDIUM GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0035251389 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-001-0107-y Document Type: Article

Times cited : (30)

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