Growth of InGaN and double heterojunction structure with InGaN back barrier

Journal of Semiconductors

Volumn 31, Issue 12, 2010, Pages

  Linyu, Shi ^a   Jincheng, Zhang ^a   Hao, Wang ^a   Junshuai, Xue ^a   Xinxiu, Ou ^a   Xiaofan, Fu ^a   Ke, Chen ^a   Yue, Hao ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

carrier confinement; double hererojunction; InGaN back barrier

Indexed keywords

ALGAN LAYERS; BARRIER LAYERS; CARRIER CONFINEMENTS; CRYSTAL QUALITIES; DOUBLE HEREROJUNCTION; DOUBLE HETEROJUNCTIONS; DRAIN-INDUCED BARRIER LOWERING; GROWTH PRESSURE; INGAN BACK BARRIER; METALORGANIC CHEMICAL VAPOR DEPOSITION; POLARIZATION FIELD; POTENTIAL BARRIERS; SOURCE-DRAIN LEAKAGE;

DRAIN CURRENT; ELECTRONIC PROPERTIES; GALLIUM NITRIDE; HETEROJUNCTIONS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SUPERCONDUCTING FILMS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 78651491944     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/31/12/123001     Document Type: Article

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