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Volumn 323, Issue 1, 2011, Pages 72-75

Growth and characterization of InGaN by RF-MBE

Author keywords

Crystal structure; InGaN; Molecular beam epitaxy; Spectroscopic ellipsometry; X ray diffraction

Indexed keywords

AFM; CRYSTALLINE QUALITY; GAN TEMPLATE; GROWTH CONDITIONS; IN-SITU; INGAN; SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS;

EID: 79957996655     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.10.124     Document Type: Article
Times cited : (31)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.