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Volumn 323, Issue 1, 2011, Pages 72-75
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Growth and characterization of InGaN by RF-MBE
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Author keywords
Crystal structure; InGaN; Molecular beam epitaxy; Spectroscopic ellipsometry; X ray diffraction
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Indexed keywords
AFM;
CRYSTALLINE QUALITY;
GAN TEMPLATE;
GROWTH CONDITIONS;
IN-SITU;
INGAN;
SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS;
GALLIUM NITRIDE;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
OPTICAL PROPERTIES;
SPECTROSCOPIC ELLIPSOMETRY;
X RAY DIFFRACTION;
X RAY DIFFRACTION ANALYSIS;
CRYSTAL STRUCTURE;
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EID: 79957996655
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.10.124 Document Type: Article |
Times cited : (31)
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References (11)
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