Resistive-switching behavior and mechanism in copper-nitride thin films prepared by DC magnetron sputtering

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 10, 2012, Pages 1996-2001

  Zhu, Wei ^a   Zhang, Xin ^a   Fu, Xiaoniu ^a   Zhou, Yongning ^a   Luo, Shengyun ^a   Wu, Xiaojing ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

conducting filaments; copper nitrides; magnetron sputtering; resistive switching

Indexed keywords

ATOMIC FORCE MICROSCOPE (AFM); CONDUCTING FILAMENT; COPPER NITRIDE; DC MAGNETRON SPUTTERING; ELECTRICAL MEASUREMENT; FITTING RESULTS; FORMING PROCESS; OPERATION VOLTAGE; RESISTANCE RATIO; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING MECHANISMS;

ATOMIC FORCE MICROSCOPY; COPPER; MAGNETRON SPUTTERING; NITRIDES; SWITCHING SYSTEMS;

FILM PREPARATION;

EID: 84867498603     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201228175     Document Type: Article

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