CVD of copper(I) nitride

Chemical Vapor Deposition

Volumn 15, Issue 10-12, 2009, Pages 300-305

  Fallberg, Anna ^a   Ottosson, Mikael ^a   Carlsson, Jan Otto ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

Cu(hfac)2; Cu3N; Growth rate dependence; Morphology

Indexed keywords

CELL PARAMETER; CHEMICAL COMPOSITIONS; CU(HFAC)2; CU3N; DETECTION LIMITS; HIGHER TEMPERATURES; PHASE CONTENT; PHASE MIXTURE; PROCESS PARAMETERS; SEM; TEMPERATURE RANGE; TYPE STRUCTURES;

AMMONIA; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; MORPHOLOGY; NITRIDES; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; STOICHIOMETRY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

COPPER;

EID: 73849131655     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200906794     Document Type: Article

References (31)

1. R. Cremer, M. Witthaut, D. Neuschutz, C. Trappe, M. Laurenzis, O. Winkler, H. Kurtz, Mikrochim. Acta 2000, 133, 299.
2. M. Asano, K. Umeda, A. Tasaki, Jpn J. Appl. Phys. 1990, 29, 1985.
3. T. Maruyama, T. Morishita, Appl. Phys. Lett. 1996, 69, 890.
4. D. Borsa, S. Grachev, D. Boerma, IEEE Trans. Magn. 2002, 38, 2709.
5. T. Nosaka, M. Yoshitake, A. Okamoto, S. Ogawa, Y. Nakayama, Thin Solid Films 1999, 348, 8.
6. Z. Liu, W. Wang, S. Chao, S. Zheng, Thin Solid Films 1998, 325, 55.
7. X. Yuan, P. Yan, J. Liu, Mater. Lett. 2006, 60, 1809.
8. K. Kim, J. Kim, J. Kang, J. Cryst. Growth 2001, 222, 767.
9. J. F. Pierson, Vacuum 2002, 66, 59.
10. G. Yue, P. Yan, J. Wang, J. Cryst. Growth 2005, 274, 464.
11. J. Wang, J. Chen, X. Yuan, Z. Wu, B. Miao, P. Yan, J. Cryst. Growth 2006, 286, 407.
12. G. Soto, J. Diaz, W. de la Cruz, Mater. Lett. 2003, 57, 4130.
13. C. Gallardo-Vega, W. de la Cruz, Appl. Surf. Sci. 2006, 252, 8001.
14. M. Mikula, D. Buc, E. Pincik, Acta Physica Slovaca 2001, 51, 35.
15. D. Borsa, D. Boerma, Surf. Sci. 2004, 548, 95.
16. S. O. Kucheyev, J. Biener, T. F. Baumann, Y. M. Wang, A. V. Hamza, Z. Li, D. K. Lee, R. G. Gordon, Langmuir, 2008, 24, 3, 943.
17. T. Törndahl, M. Ottosson, J.-C. Carlsson, J. Electrochem. Soc. 2006, 153, 146.
18. J. Zhao, L. Yang, Y. Yu, S. You, J. Liu, C. Jin, Phys. Status Solidi 2006, 243, 573.
19. Z. W. Li, R. G. Gordon, Chem. Vap. Deposition 2006, 12, 435.
20. F. Gulo, A. Simon, J. Köhler, R. Kremer, Angew. Chem. Int. Ed. 2004, 43, 2032.
21. H. Pierson, Handbook of Chemical Vapor Deposition - Principles, Technology and Applications, 2nd Ed., William Andrew Publishing/Noyes 1999.
22. J. Pinkas, J. Huffman, D. Baxter, M. Chisholm, K. Caulton, Chem. Mater. 1995, 7, 1589.
23. Y. Zhang, L. F. Leung-Yuk, Z. F. Yan, X. J. Hu, Sci. China Ser. E-Technol. Sci. 2009, 52, 352.
24. F. Maury, S. Vidal, A. Gleizes, Adv. Mater. Opt. Electron. 2000, 10, 123.
25. G. G. Condorelli, G. Malandrino, I. Fragalà, Chem. Mater. 1994, 6, 1861.
26. R. Juza, H. Hahn, Z. Anorg. Alleg. Chem. 1939, 241, 172.
27. T. Maruyama, T. Morishita, J. Appl. Phys. 1995, 78, 4104.
28. E. Brunnix, A. van Eenbergen, P. van der Werf, J. Hajsma, J. Mater. Sci. 1986, 21, 541.
29. P. Martin, R. Netterfield, T. Kinder, A. Bendavid, Appl. Opt. 1992, 31, 6734.
30. X. Fan, Z. Wu, H. Li, B. Geng, C. Li, P. Yan, J. Phys. D: Appl. Phys. 2007, 40, 3430.
31. H. K. Sanghera, J. L. Sullivan, Surf. Interf. Anal. 1999, 27, 678.