Insertion of Zn atoms into Cu3N lattice: Structural distortion and modification of electronic properties

Journal of Crystal Growth

Volumn 321, Issue 1, 2011, Pages 157-161

  Gao, L ^a   Ji, A L ^a   Zhang, W B ^a   Cao, Z X ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

A3. Magnetron sputtering; A3. Thin film; B1. Copper nitride; B2. Electrical properties

Indexed keywords

A3. MAGNETRON SPUTTERING; A3. THIN FILM; B1. COPPER NITRIDE; B2. ELECTRICAL PROPERTIES; CRYSTALLINITIES; DOPED SAMPLE; ELECTRICAL CONDUCTION; ELECTRICAL RESISTIVITY; ELECTRONIC TRANSPORT; HOPPING MECHANISM; LOW TEMPERATURES; METAL TARGET; NANOCRYSTALLINE CU; REACTIVE MAGNETRON SPUTTERING; ROOM TEMPERATURE; SHALLOW DONORS; STRUCTURAL DISTORTIONS; TERNARY DEPOSITS; THERMAL ACTIVATION; THREE ORDERS OF MAGNITUDE; ZINC ATOMS; ZINC CONCENTRATION; ZN ATOMS; ZN CONTENT;

ACTIVATION ENERGY; DEPOSITS; DIFFRACTION; ELECTRIC CONDUCTIVITY; ELECTRONIC PROPERTIES; MAGNETRON SPUTTERING; NITRIDES; THIN FILMS; X RAY DIFFRACTION;

ZINC;

EID: 79953238533     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.02.030     Document Type: Article

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