Field-effect transistors from lithographically patterned cadmium selenide nanowire arrays

ACS Applied Materials and Interfaces

Volumn 4, Issue 9, 2012, Pages 4445-4452

  Ayvazian, Talin ^a   Xing, Wendong ^b   Yan, Wenbo ^b   Penner, Reginald M ^a,b  

^a University of California at Irvine   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

annealing; channel length; electrodeposition; lithography; mobility; NWFET

Indexed keywords

BACK GATES; CADMIUM SELENIDES; CHANNEL LENGTH; FIELD-EFFECT MOBILITIES; GRAZING INCIDENCE X-RAY DIFFRACTION; GROWTH PROMOTERS; MEAN GRAIN DIAMETER; NANOWIRE ARRAYS; NWFET; POLYCRYSTALLINE CADMIUM SELENIDE; SUBTHRESHOLD SLOPE; TRANSFER CHARACTERISTICS; WURTZITES;

ANNEALING; CADMIUM ALLOYS; CADMIUM CHLORIDE; CARRIER MOBILITY; ELECTRODEPOSITION; FIELD EFFECT TRANSISTORS; GRAIN GROWTH; LITHOGRAPHY; METHANOL; NANOWIRES; X RAY DIFFRACTION; ZINC SULFIDE;

CADMIUM COMPOUNDS;

CADMIUM CHLORIDE; CADMIUM DERIVATIVE; CADMIUM SELENIDE; METHANOL; NANOWIRE; SELENIUM DERIVATIVE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTROPLATING INDUSTRY; SEMICONDUCTOR; TEMPERATURE;

CADMIUM CHLORIDE; CADMIUM COMPOUNDS; CRYSTALLIZATION; ELECTROPLATING; METHANOL; NANOWIRES; SELENIUM COMPOUNDS; TEMPERATURE; TRANSISTORS, ELECTRONIC;

EID: 84867438934     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am301302b     Document Type: Article

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