Control of the size and position of silicon nanowires grown via the vapbr-liquid-solid technique

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 10, 1997, Pages 6204-6209

  Westwater, Jonathan ^a   Gosain, Dharam Pal ^a   Usui, Setsuo ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Condensation coefficient; Etching; Nanowire; Nucleation center; Position control; Selective deposition; Vapor liquid solid reaction

Indexed keywords

CRYSTAL GROWTH; DEPOSITION; ETCHING; EVAPORATION; GOLD; HIGH TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; NUCLEATION; SILICA; SILICON WAFERS; THERMOOXIDATION;

CONDENSATION COEFFICIENTS; NANOWIRES;

CRYSTAL WHISKERS;

EID: 0031246334     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6204     Document Type: Article

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