SCOPUS 정보 검색 플랫폼

Volumn 50, Issue 4 PART 2, 2011, Pages

Erratum: Fabrication of high-sensitivity polycrystalline silicon nanowire field-effect transistor pH sensor using conventional complementary metal–oxide–semiconductor technology (Japanese Journal of Applied Physics (2011) 50 (04DL05) DOI: 10.1143/JJAP.50.04DL05);Fabrication of high-sensitivity polycrystalline silicon nanowire field-effect transistor ph sensor using conventional complementary metal-oxide-semiconductor technology

(5) Chen, Hou Yu a Lin, Chia Yi b Chen, Min Cheng b Huang, Chien Chao b Chien, Chao Hsin a,b

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL NANO DEVICE LABORATORIES (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; FABRICATION; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; METALLIC COMPOUNDS; METALS; MOS DEVICES; NANOWIRES; OXIDE SEMICONDUCTORS; PH EFFECTS; POLYCRYSTALLINE MATERIALS; POLYSILICON; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON COMPOUNDS; SYSTEM-ON-CHIP; THRESHOLD VOLTAGE; VLSI CIRCUITS;

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR PROCESS; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; NANOWIRE FIELD EFFECT TRANSISTORS (NW FET); POLYCRYSTALLINE SILICON (POLY-SI); SELF ALIGNED FABRICATION; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS; THRESHOLD VOLTAGE SHIFTS; VERY-LARGE-SCALE INTEGRATION CIRCUITS;

PH SENSORS;

EID: 79955417845 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.7567/JJAP.57.059202 Document Type: Erratum

Times cited : (6)

References (26)

1
- 10444230343
- M. Schienle, C. Paulus, A. Frey, F. Hofmann, B. Holzapfl, P. Schindler- Bauer, and R. Thewes: IEEE J. Solid-State Circuits 39 (2004) 2438.
- (2004) IEEE J. Solid-State Circuits , vol.39 , pp. 2438
- Schienle, M.¹ Paulus, C.² Frey, A.³ Hofmann, F.⁴ Holzapfl, C.⁵ Schindler-Bauer, P.⁶ Thewes, R.⁷

2
- 33845641002
- A. Hassibi and T. H. Lee: IEEE Sensors 6 (2006) 1380.
- (2006) IEEE Sensors , vol.6 , pp. 1380
- Hassibi, A.¹ Lee, T.H.²

3
- 33847698015
- M. Barbaro, A. Bonfiglio, and L. Raffo: IEEE Trans. Electron Devices 53 (2006) 158.
- (2006) IEEE Trans. Electron Devices , vol.53 , pp. 158
- Barbaro, M.¹ Bonfiglio, A.² Raffo, L.³

4
- 0035902938
- Y. Cui, Q. Wei, H. Park, and C. M. Lieber: Science 293 (2001) 1289.
- (2001) Science , vol.293 , pp. 1289
- Cui, Y.¹ Wei, Q.² Park, H.³ Lieber, C.M.⁴

5
- 1442275478
- Z. Li, Y. Chen, X. Li, T. I. Kamins, K. Nauka, and R. S. Williams: Nano Lett. 4 (2004) 245.
- (2004) Nano Lett. , vol.4 , pp. 245
- Li, Z.¹ Chen, Y.² Li, X.³ Kamins, T.I.⁴ Nauka, K.⁵ Williams, R.S.⁶

6
- 33846695595
- E. Stern, J. F. Klemic, D. A. Routenberg, P. N. Wyrembak, D. B. Turner- Evans, A. D. Hamilton, D. A. Lavan, T. M. Fahmy, and M. A. Reed: Nature 445 (2007) 519.
- (2007) Nature , vol.445 , pp. 519
- Stern, E.¹ Klemic, J.F.² Routenberg, D.A.³ Wyrembak, P.N.⁴ Turner-Evans, D.B.⁵ Hamilton, A.D.⁶ Lavan, D.A.⁷ Fahmy, T.M.⁸ Reed, M.A.⁹

7
- 43149112560
- N. Elfström, A. E. Karlström, and J. Linnros: Nano Lett. 8 (2008) 945.
- (2008) Nano Lett. , vol.8 , pp. 945
- Elfström, N.¹ Karlström, A.E.² Linnros, J.³

8
- 26444483307
- H. C. Lin, M. H. Lee, C. J. Su, T. Y. Huang, C. C. Lee, and Y. S. Yang: IEEE Electron Device Lett. 26 (2005) 643.
- (2005) IEEE Electron Device Lett. , vol.26 , pp. 643
- Lin, H.C.¹ Lee, M.H.² Su, C.J.³ Huang, T.Y.⁴ Lee, C.C.⁵ Yang, Y.S.⁶

9
- 67349142565
- C. H. Lin, C. H. Hung, C. Y. Hsiao, H. C. Lin, F. H. Ko, and Y. S. Yang: Biosens. Bioelectron. 24 (2009) 3019.
- (2009) Biosens. Bioelectron. , vol.24 , pp. 3019
- Lin, C.H.¹ Hung, C.H.² Hsiao, C.Y.³ Lin, H.C.⁴ Ko, F.H.⁵ Yang, Y.S.⁶

10
- 58149145758
- C. Y. Hsiao, C. H. Lin, C. H. Hung, C. J. Su, Y. R. Lo, C. C. Lee, H. C. Lin, F. H. Ko, T. Y. Huang, and Y. S. Yang: Biosens. Bioelectron. 24 (2009) 1223.
- (2009) Biosens. Bioelectron. , vol.24 , pp. 1223
- Hsiao, C.Y.¹ Lin, C.H.² Hung, C.H.³ Su, C.J.⁴ Lo, Y.R.⁵ Lee, C.C.⁶ Lin, H.C.⁷ Ko, F.H.⁸ Huang, T.Y.⁹ Yang, Y.S.¹⁰

11
- 45149116306
- P. R. Nair and M. A. Alam: Nano Lett. 8 (2008) 1281.
- (2008) Nano Lett. , vol.8 , pp. 1281
- Nair, P.R.¹ Alam, M.A.²

12
- 0141761522
- T. Park, S. Choi, D. H. Lee, J. R. Yoo, B. C. Lee, J. Y. Kim, C. G Lee, K. K. Chi, S. H. Hay, S. J. Hvun, Y. G. Shin, J. N. Han, I. S. Park, U. I. Chune, J. T. Moon, E. Yoon, and J. H. Le: Symp. VLSI Tech. Dig., 2003, p. 135.
- (2003) Symp. VLSI Tech. Dig. , pp. 135
- Park, T.¹ Choi, S.² Lee, D.H.³ Yoo, J.R.⁴ Lee, C.C.⁵ Kim, J.Y.⁶ Lee, C.G.⁷ Chi, K.K.⁸ Hay, S.H.⁹ Hvun, S.J.¹⁰ Shin, Y.G.¹¹ Han, J.N.¹² Park, I.S.¹³ Chune, U.I.¹⁴ Moon, J.T.¹⁵ Yoon, E.¹⁶ Le, J.H.¹⁷

13
- 0031150286
- K. Vanheusden, J. R. Schwank, W. L. Warren, D. M. Fleetwood, and R. A. B. Devine: Microelectron. Eng. 36 (1997) 241.
- (1997) Microelectron. Eng. , vol.36 , pp. 241
- Vanheusden, K.¹ Schwank, J.R.² Warren, W.L.³ Fleetwood, D.M.⁴ Devine, R.A.B.⁵

14
- 2342522065
- J. D. Lee, J. H. Choi, D. Park, and K. Kim: IEEE Trans. Device Mater. Reliab. 4 (2004) 110.
- (2004) IEEE Trans. Device Mater. Reliab. , vol.4 , pp. 110
- Lee, J.D.¹ Choi, J.H.² Park, D.³ Kim, K.⁴

15
- 0018996384
- E. A. Irene, E. Tierney, and D. W. Dong: J. Electrochem. Soc. 127 (1980) 705.
- (1980) J. Electrochem. Soc. , vol.127 , pp. 705
- Irene, E.A.¹ Tierney, E.² Dong, D.W.³

16
- 21644476763
- Y. C. Wu, C. Y. Chang, T. C. Chang, P. T. Liu, C. S. Chen, C. H. Tu, H. W. Zan, Y. H. Tai, and S. M. Sze: IEDM Tech. Dig., 2004, p. 777.
- (2004) IEDM Tech. Dig. , pp. 777
- Wu, Y.C.¹ Chang, C.Y.² Chang, T.C.³ Liu, P.T.⁴ Chen, C.S.⁵ Tu, C.H.⁶ Zan, H.W.⁷ Tai, Y.H.⁸ Sze, S.M.⁹

17
- 0018547858
- W. M. Siu and R. S. C. Cobbold: IEEE Trans. Electron Devices 26 (1979) 1805.
- (1979) IEEE Trans. Electron Devices , vol.26 , pp. 1805
- Siu, W.M.¹ Cobbold, R.S.C.²

18
- 71549135596
- I. Park, Z. Li, A. P. Pisano, and R. S. Williams: Nanotechnology 21 (2010) 015501.
- (2010) Nanotechnology , vol.21 , pp. 015501
- Park, I.¹ Li, Z.² Pisano, A.P.³ Williams, R.S.⁴

19
- 0021483678
- L. Bousse and P. Bergveld: Sens. Actuators B 6 (1984) 65.
- (1984) Sens. Actuators B , vol.6 , pp. 65
- Bousse, L.¹ Bergveld, P.²

20
- 0027005201
- L. Bousse, S. Mostarshed, and D. Hafeman: Sens. Actuators B 10 (1992) 67.
- (1992) Sens. Actuators B , vol.10 , pp. 67
- Bousse, L.¹ Mostarshed, S.² Hafeman, D.³

21
- 77953303159
- O. Knopfmacher, A. Tarasov, W. Fu, M. Wipf, B. Niesen, M. Calame, and C. Schönenberger: Nano Lett. 10 (2010) 2268.
- (2010) Nano Lett. , vol.10 , pp. 2268
- Knopfmacher, O.¹ Tarasov, A.² Fu, W.³ Wipf, M.⁴ Niesen, C.⁵ Calame, M.⁶ Schönenberger, C.⁷

22
- 77649158857
- B. R. Takulapalli: ACS Nano 4 (2010) 999.
- (2010) ACS Nano , vol.4 , pp. 999
- Takulapalli, C.R.¹

23
- 0032625315
- A. O. Adan, K. Higashi, and Y. Fukushima: IEEE Trans. Electron Devices 46 (1999) 729.
- (1999) IEEE Trans. Electron Devices , vol.46 , pp. 729
- Adan, A.O.¹ Higashi, K.² Fukushima, Y.³

24
- 37249080259
- A. B. Kahng and K. Samadi: IEEE Trans. Comput. Aided Des. IC Syst. 27 (2008) 3.
- (2008) IEEE Trans. Comput. Aided Des. IC Syst. , vol.27 , pp. 3
- Kahng, A.B.¹ Samadi, K.²

25
- 75649125599
- M. Krishnan, J. W. Nalaskowski, and L. M. Cook: Chem. Rev. 110 (2010) 178.
- (2010) Chem. Rev. , vol.110 , pp. 178
- Krishnan, M.¹ Nalaskowski, J.W.² Cook, L.M.³

26
- 36849051835
- P. R. Nair and M. A. Alam: IEEE Trans. Electron Devices 54 (2007) 3400.
- (2007) IEEE Trans. Electron Devices , vol.54 , pp. 3400
- Nair, P.R.¹ Alam, M.A.²

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