Size-dependent electrical transport in CdSe nanocrystal thin films

Nano Letters

Volumn 10, Issue 9, 2010, Pages 3727-3732

  Kang, Moon Sung ^a   Sahu, Ayaskanta ^a   Norris, David J ^a   Frisbie, C Daniel ^a  

^a University of Minnesota   (United States)

Author keywords

CdSe nanocrystals; electrical transport; ion gel gate dielectric; size dependence; thin film transistors

Indexed keywords

CDSE NANOCRYSTALS; CHARGE TRANSPORT; CHARGING ENERGIES; ELECTRICAL TRANSPORT; ELECTRON DENSITIES; HOPPING MECHANISM; NANOCRYSTAL FILMS; NEAREST-NEIGHBORS; PARTICLE DIAMETERS; PREEXPONENTIAL FACTOR; SIZE DEPENDENCE; STRONG CORRELATION; TEMPERATURE-DEPENDENT MEASUREMENTS; TRANSPORT PARAMETERS; TURN ON VOLTAGE; UNOCCUPIED ELECTRONIC STATE;

ACTIVATION ENERGY; CADMIUM ALLOYS; CADMIUM COMPOUNDS; ELECTRON MOBILITY; ELECTRONIC STATES; GATE DIELECTRICS; GATES (TRANSISTOR); GELS; THIN FILM TRANSISTORS;

NANOCRYSTALS;

EID: 77956429315     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl102356x     Document Type: Article

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