A CMOS-compatible poly-si nanowire device with hybrid sensor/memory characteristics for system-on-chip applications

Sensors

Volumn 12, Issue 4, 2012, Pages 3952-3963

  Chen, Min Cheng ^a   Chen, Hao Yu ^a,b   Lin, Chia Yi ^a   Chien, Chao Hsin ^b   Hsieh, Tsung Fan ^c   Horng, Jim Tong ^c   Qiu, Jian Tai ^c   Huang, Chien Chao ^a   Ho, Chia Hua ^a   Yang, Fu Liang ^a  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Nano sensor fabrication; Nanowire FET; Nonvolatile memories; Semiconductive sensors

Indexed keywords

DNA; NANOWIRE; SILICON;

ARTICLE; CHEMISTRY; PH; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR;

DNA; HYDROGEN-ION CONCENTRATION; MICROSCOPY, ELECTRON, SCANNING; NANOWIRES; SEMICONDUCTORS; SILICON;

EID: 84860185310     PISSN: 14248220     EISSN: None     Source Type: Journal    
DOI: 10.3390/s120403952     Document Type: Article

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