ZnO nanowire and WS2 nanotube electronics

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 2988-3000

  Unalan, Husnu Emrah ^a   Yang, Yang ^a   Zhang, Yan ^a   Hiralal, Pritesh ^a   Kuo, Daniel ^a   Dalal, Sharvari ^a   Butler, Tim ^a   Cha, Seung Nam ^a,b   Jang, Jae Eun ^a,b   Chremmou, Konstantina ^a   Lentaris, Georgios ^a   Wei, Di ^a   Rosentsveig, Rital ^c   Suzuki, Kenichi ^d   Matsumoto, Hidetoshi ^e   Minagawa, Mie ^e   Hayashi, Yasuhiko ^f   Chhowalla, Manish ^g   Tanioka, Akihiko ^e   Milne, William I ^a   Tenne, Reshef ^c   Amaratunga, Geham A J ^a   more..

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^d JAPAN ENERGY CORPORATION   (Japan)

^e TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^f NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^g The State University of New Jersey   (United States)

Author keywords

Nanotubes; Nanowires; Solar cells; Transistors; Tungsten disulfide; Zinc oxide

Indexed keywords

ELECTRIC WIRE; ENERGY CONVERSION; FIELD EFFECT TRANSISTORS; NANOSTRUCTURES; NANOTUBES; NANOWIRES; OPTOELECTRONIC DEVICES; OXIDES; SEMICONDUCTING INDIUM; SEMICONDUCTING ZINC COMPOUNDS; SOLAR ENERGY; TRANSISTORS; TUNGSTEN; ZINC; ZINC ALLOYS; ZINC OXIDE;

ELECTRON ACCEPTORS; EXCELLENT PERFORMANCES; MOBILITY VALUES; NANOTUBE ELECTRONICS; NANOWIRE TRANSISTORS; PHOTOINDUCED CHARGE SEPARATIONS; PHOTOVOLTAIC (PV); SEMICONDUCTING NANOSTRUCTURES; TUNGSTEN DISULFIDE; TUNGSTEN DISULFIDES; VISIBLE LIGHTS; ZNO NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 56549124077     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2005166     Document Type: Article

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