Synthesis of high quality n-type CdSe nanobelts and their applications in nanodevices

Journal of Physical Chemistry C

Volumn 113, Issue 32, 2009, Pages 14478-14481

  Liu, Cui ^a   Wu, Peicai ^a   Sun, Tuo ^a   Dai, Lun ^a   Ye, Yu ^a   Ma, Renmin ^a   Qin, Guogang ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-EDGE EMISSIONS; CHEMICAL VAPOR DEPOSITION METHODS; ELECTROLUMINESCENCE SPECTRA; ELECTRON CONCENTRATION; FULL-WIDTH AT HALF-MAXIMUM; HIGH QUALITY; MAXIMUM TRANSCONDUCTANCE; NANO-DEVICES; ON-OFF RATIO; ONE DIMENSIONAL (1D) NANOSTRUCTURES; ROOM TEMPERATURE;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; ELECTRIC POTENTIAL; ELECTRON MOBILITY; EMISSION SPECTROSCOPY; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; MESFET DEVICES; NANOBELTS; SEMICONDUCTING SILICON COMPOUNDS; SYNTHESIS (CHEMICAL);

FIELD EFFECT TRANSISTORS;

EID: 68749089652     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp9031139     Document Type: Article

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