Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

Journal of Alloys and Compounds

Volumn 548, Issue , 2013, Pages 1-6

  Li, M X ^a   Miao, J ^a   Wu, S Z ^a   Liu, Q L ^a   Jiang, Y ^a   Yang, H ^b   Qiao, L J ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^b SOOCHOW UNIVERSITY   (China)

Author keywords

Conduction mechanism; Copper oxide; Resistive switching; SrZrO3

Indexed keywords

BISTABLES; COMPLIANCE CURRENT; CONDUCTING FILAMENT; CONDUCTION MECHANISM; CURRENT-VOLTAGE MEASUREMENTS; HIGH POTENTIAL; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MEMORY FILM; NON-VOLATILE MEMORY APPLICATION; OHMIC CONDUCTION; OPERATION VOLTAGE; RESISTANCE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RETENTION BEHAVIOR; ROOM TEMPERATURE; SPACE-CHARGE-LIMITED CURRENT; SRZRO;

COPPER; COPPER OXIDES; ELECTRIC CONDUCTIVITY; MODULATION;

SWITCHING SYSTEMS;

EID: 84867235894     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.08.135     Document Type: Article

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