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Applied Physics Letters

Volumn 98, Issue 12, 2011, Pages

Comprehensive study of the resistance switching in SrTiO3 and Nb-doped SrTiO3

(8) Chen, X G a Ma, X B a Yang, Y B a Chen, L P a Xiong, G C a Lian, G J a Yang, Y C a Yang, J B a

a PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITY; COMPREHENSIVE STUDIES; DE-TRAPPING; DOPING LEVELS; ELECTRODE CONFIGURATIONS; I - V CURVE; NB-DOPED SRTIO; RESISTANCE SWITCHING; SCHOTTKY; SCHOTTKY JUNCTIONS; SRTIO;

CARRIER CONCENTRATION; DISTILLATION; DOPING (ADDITIVES);

STRONTIUM ALLOYS;

EID: 79953890316 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3569586 Document Type: Article

Times cited : (125)

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