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Journal of Alloys and Compounds

Volumn 509, Issue 5, 2011, Pages 2050-2053

Current-voltage characteristics of sol-gel derived SrZrO3 thin films for resistive memory applications

(5) Wu, Jingxian a Wen, Zheng a Wu, Di a Zhai, Haifa a Li, Aidong a

a NANJING UNIVERSITY (China)

Author keywords

Resistive switching; Sol gel process; Thin films

Indexed keywords

CONDUCTION MECHANISM; DEEP TRAPS; HIGH-RESISTANCE STATE; RESISTIVE MEMORIES; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SI SUBSTRATES; SPACE-CHARGE LIMITED; SRZRO;

CURRENT VOLTAGE CHARACTERISTICS; GELS; NANOSTRUCTURED MATERIALS; OXYGEN; RANDOM ACCESS STORAGE; SILICON COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; SOLS; SWITCHING; SWITCHING SYSTEMS; THIN FILMS; ZIRCONIUM;

OXYGEN VACANCIES;

EID: 78651355805 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2010.10.134 Document Type: Article

Times cited : (18)

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