Defects control for improved electrical properties in (Ba 0.8Sr 0.2)(Zr 0.2Ti 0.8)O 3 films by Co acceptor doping

Applied Physics Letters

Volumn 99, Issue 23, 2011, Pages

  Miao, Jun ^a   Hooi Chew, Khian ^b   Jiang, Yong ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^b UNIVERSITY OF MALAYA   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR DOPING; CO-DOPED; CO-DOPING; DEFECT CONCENTRATIONS; DEFECTS CONTROL; DIELECTRIC TUNABILITY; MATERIAL DESIGNS; SRTIO;

BARIUM; COBALT; COBALT COMPOUNDS; DEFECTS; DIELECTRIC LOSSES; DIELECTRIC MATERIALS; PULSED LASER DEPOSITION; SEMICONDUCTOR DOPING; ZIRCONIUM;

ELECTRIC PROPERTIES;

EID: 83455179688     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3666021     Document Type: Article

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