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Applied Physics Letters

Volumn 97, Issue 25, 2010, Pages

Reduction in reset current of unipolar NiO-based resistive switching through nickel interfacial layer

(2) Lee, Hyung Dong a Nishi, Yoshio a

a Stanford University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECT OF OXYGEN; INTERFACIAL LAYER; INTERFACIAL OXIDE LAYERS; RESET CURRENTS; RESISTIVE SWITCHING; SWITCHING CHARACTERISTICS; TIME REDUCTION;

OXYGEN; SWITCHING SYSTEMS;

OXYGEN VACANCIES;

EID: 78650752036 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3528211 Document Type: Article

Times cited : (25)

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