Ionized-oxygen vacancies related dielectric relaxation in heteroepitaxial K0.5Na0.5NbO3/La0.67Sr 0.33MnO3 structure at elevated temperature

Applied Physics Letters

Volumn 95, Issue 13, 2009, Pages

  Miao, J ^a   Xu, X G ^a   Jiang, Y ^a   Cao, L X ^b   Zhao, B R ^b  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FIELD; CRYSTALLOGRAPHIC STRUCTURE; DIELECTRIC RELAXOR; ELEVATED TEMPERATURE; EPITAXIALLY GROWN; HETEROEPITAXIAL; PULSE LASER DEPOSITION; REMNANT POLARIZATIONS; TEMPERATURE RANGE; THERMALLY ACTIVATED PROCESS;

ACTIVATION ENERGY; DIELECTRIC RELAXATION; MANGANESE COMPOUNDS; OXYGEN; OXYGEN VACANCIES; PULSED LASER APPLICATIONS; SODIUM;

LANTHANUM;

EID: 70349673711     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3242009     Document Type: Article

References (23)

1. A. B. Kounga, S. T. Zhang, W. Jo, T. Granzow, and J. Rödel, Appl. Phys. Lett. 0003-6951 92, 222902 (2008). 10.1063/1.2938064
2. D. Lin, K. W. Kwok, and H. L. W. Chan, Appl. Phys. Lett. 0003-6951 90, 232903 (2007). 10.1063/1.2746087 (Pubitemid 46960301)
3. J. Ryu, J. -J. Choi, B. -D. Hahn, D. -S. Park, W. -H. Yoon, and K. -H. Kim, Appl. Phys. Lett. 0003-6951 90, 152901 (2007). 10.1063/1.2720751 (Pubitemid 46609863)
4. E. Hollenstein, M. Davis, D. Damjanovic, and N. Setter, Appl. Phys. Lett. 0003-6951 87, 182905 (2005). 10.1063/1.2123387 (Pubitemid 41528215)
5. M. Matsubara, K. Kikuta, and S. Hirano, J. Appl. Phys. 0021-8979 97, 114105 (2005). 10.1063/1.1926396 (Pubitemid 40844787)
6. Y. Kizaki, Y. Noguchi, and M. Miyayama, Appl. Phys. Lett. 0003-6951 89, 142910 (2006). 10.1063/1.2357859 (Pubitemid 44529649)
7. M. Abazari, E. K. Akdoǧan, and A. Safari, J. Appl. Phys. 0021-8979 103, 104106 (2008). 10.1063/1.2927470 (Pubitemid 351776519)
8. M. Blomqvist, J. -H. Koh, S. I. Khartsev, A. M. Grishin, and J. Andŕasson, Appl. Phys. Lett. 0003-6951 81, 337 (2002). 10.1063/1.1492854 (Pubitemid 34803039)
9. S. I. Khartsev, M. A. Grishin, and A. M. Grishin, Appl. Phys. Lett. 0003-6951 86, 062901 (2005). 10.1063/1.1861121
10. C. W. Ahn, E. D. Jeong, S. Y. Lee, H. J. Lee, S. H. Kang, and I. W. Kim, Appl. Phys. Lett. 0003-6951 93, 212905 (2008). 10.1063/1.3037214
11. H. J. Lee, I. W. Kim, J. S. Kim, C. W. Ahn, and B. H. Park, Appl. Phys. Lett. 0003-6951 94, 092902 (2009). 10.1063/1.3095500
12. A. A. Bokov and Z. -G. Ye, Phys. Rev. B 0163-1829 74, 132102 (2006). 10.1103/PhysRevB.74.132102 (Pubitemid 44511534)
13. J. Toulouse, F. Jiang, O. Svitelskiy, W. Chen, and Z. -G. Ye, Phys. Rev. B 0163-1829 72, 184106 (2005). 10.1103/PhysRevB.72.184106 (Pubitemid 43021961)
14. A. Dixit, S. B. Majumder, R. S. Katiyar, and A. S. Bhalla, Appl. Phys. Lett. 0003-6951 82, 2679 (2003). 10.1063/1.1568166
15. Z. H. Zhou, J. M. Xue, W. Z. Li, J. Wang, H. Zhu, and J. M. Miao, Appl. Phys. Lett. 0003-6951 85, 804 (2004). 10.1063/1.1771808
16. J. Miao, H. Y. Tian, X. Y. Zhou, K. H. Pang, and Y. Wang, J. Appl. Phys. 0021-8979 101, 084101 (2007). 10.1063/1.2721393 (Pubitemid 46691154)
17. W. C. Yi, T. S. Kalkur, E. Philofsky, L. Kammerdiner, and A. A. Rywak, Appl. Phys. Lett. 0003-6951 78, 3517 (2001). 10.1063/1.1375002
18. A. E. Paladino, J. Am. Ceram. Soc. 0002-7820 48, 476 (1965). 10.1111/j.1151-2916.1965.tb14803.x
19. Z. Y. Wang and T. G. Chen, Phys. Status Solidi A 0031-8965 167, R3 (1998). 10.1002/(SICI)1521-396X(199805)167:1
20. M. Kuwabara, K. Goda, and K. Oshima, Phys. Rev. B 0163-1829 42, 10012 (1990). 10.1103/PhysRevB.42.10012
21. W. D. Kingery, H. K. Bowen, and D. R. Uhlmann, Introduction to Ceramics (Wiley, New York, 1976).
22. K. Morii, H. Kawano, I. Fujii, T. Matsui, and Y. Nakayama, J. Appl. Phys. 0021-8979 78, 1914 (1995). 10.1063/1.360228
23. S. Khartsev, A. Grishin, J. Andreasson, J. H. Koh, and J. S. Song, Integr. Ferroelectr. 1058-4587 55, 769 (2003).