Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 5, 2012, Pages

  Zhu, Chiyu ^a   Smith, David J ^a   Nemanich, Robert J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNMENT; ATOMIC LAYER DEPOSITION; ELECTRONIC PROPERTIES; HAFNIUM; HAFNIUM OXIDES; HELIUM; HIGH RESOLUTION ELECTRON MICROSCOPY; LANTHANUM OXIDES; LOGIC GATES; OXYGEN; PHOTOELECTRON SPECTROSCOPY; SILICON; THIN FILM TRANSISTORS; ZINC OXIDE;

AMORPHOUS STRUCTURES; BAND ALIGNMENTS; CHANNEL LAYERS; DEPOSITED LAYER; EXCESS OXYGEN; GATE STACK STRUCTURE; HELIUM PLASMAS; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; POST DEPOSITION TREATMENT; SI SUBSTRATES; SI(100) SURFACE; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY; VALENCE BAND OFFSETS; ZNO; ZNO FILMS; ZNO LAYERS;

LANTHANUM;

EID: 84866504100     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4752089     Document Type: Article

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