Interface states at high-/InGaAs interface: H2O vs. O 3 based ALD dielectric

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2011, Pages 117-118

  Madan, H ^a   Veksler, D ^a   Chen, Y T ^a   Huang, J ^a   Goel, N ^a   Bersuker, G ^b   Datta, S ^c  

^a SEMATECH   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALD DIELECTRIC; CONDUCTANCE ANALYSIS; DC VOLTAGE; KINETICS CHARACTERISTICS; MID-GAP TRAP; NATIVE OXIDES; QUASI-STATIC C-V;

ENERGY GAP; GALLIUM; INDIUM;

ATOMIC LAYER DEPOSITION;

EID: 84880723136     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2011.5994443     Document Type: Conference Paper

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