SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 98, Issue 5, 2011, Pages

Influence of trimethylaluminum on the growth and properties of HfO 2 / In0.53 Ga0.47 As interfaces

(3) Hwang, Yoontae a Engel Herbert, Roman b Stemmer, Susanne a

a University of California (United States)

b PENNSYLVANIA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALKOXIDE PRECURSOR; AS INTERFACES; BEAM DEPOSITION; ELECTRICAL PROPERTY; FORMING GAS; LOW DOSE; LOW TEMPERATURES; POST-DEPOSITION; RECONSTRUCTED SURFACES; TRIMETHYLALUMINUM;

CHEMICAL MODIFICATION; ELECTRIC PROPERTIES; GALLIUM; HAFNIUM COMPOUNDS; SURFACE ACTIVE AGENTS; THERMOANALYSIS;

PHASE INTERFACES;

EID: 79951469354 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3553275 Document Type: Article

Times cited : (29)

References (14)

1
- 78650866081
- 0021-8979, 10.1063/1.3520431
- R. Engel-Herbert, Y. Hwang, and S. Stemmer, J. Appl. Phys. 0021-8979 108, 124101 (2010). 10.1063/1.3520431
- (2010) J. Appl. Phys. , vol.108 , pp. 124101
- Engel-Herbert, R.¹ Hwang, Y.² Stemmer, S.³

2
- 67349183396
- 0167-9317, 10.1016/j.mee.2009.03.112
- H. C. Lin, W. E. Wang, G. Brammertz, M. Meuris, and M. Heyns, Microelectron. Eng. 0167-9317 86, 1554 (2009). 10.1016/j.mee.2009.03.112
- (2009) Microelectron. Eng. , vol.86 , pp. 1554
- Lin, H.C.¹ Wang, W.E.² Brammertz, G.³ Meuris, M.⁴ Heyns, M.⁵

3
- 75749127285
- 0003-6951, 10.1063/1.3281027
- E. J. Kim, L. Q. Wang, P. M. Asbeck, K. C. Saraswat, and P. C. McIntyre, Appl. Phys. Lett. 0003-6951 96, 012906 (2010). 10.1063/1.3281027
- (2010) Appl. Phys. Lett. , vol.96 , pp. 012906
- Kim, E.J.¹ Wang, L.Q.² Asbeck, P.M.³ Saraswat, K.C.⁴ McIntyre, P.C.⁵

4
- 77955896094
- 0021-8979, 10.1063/1.3465524
- Y. Hwang, R. Engel-Herbert, N. G. Rudawski, and S. Stemmer, J. Appl. Phys. 0021-8979 108, 034111 (2010). 10.1063/1.3465524
- (2010) J. Appl. Phys. , vol.108 , pp. 034111
- Hwang, Y.¹ Engel-Herbert, R.² Rudawski, N.G.³ Stemmer, S.⁴

5
- 39749157907
- GaAs interfacial self-cleaning by atomic layer deposition
- DOI 10.1063/1.2883956
- C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim, and R. M. Wallace, Appl. Phys. Lett. 0003-6951 92, 071901 (2008). 10.1063/1.2883956 (Pubitemid 351304840)
- (2008) Applied Physics Letters , vol.92 , Issue.7 , pp. 071901
- Hinkle, C.L.¹ Sonnet, A.M.² Vogel, E.M.³ McDonnell, S.⁴ Hughes, G.J.⁵ Milojevic, M.⁶ Lee, B.⁷ Aguirre-Tostado, F.S.⁸ Choi, K.J.⁹ Kim, H.C.¹⁰ Kim, J.¹¹ Wallace, R.M.¹²

6
- 77949690122
- 0003-6951, 10.1063/1.3360221
- Y. Hwang, R. Engel-Herbert, N. G. Rudawski, and S. Stemmer, Appl. Phys. Lett. 0003-6951 96, 102910 (2010). 10.1063/1.3360221
- (2010) Appl. Phys. Lett. , vol.96 , pp. 102910
- Hwang, Y.¹ Engel-Herbert, R.² Rudawski, N.G.³ Stemmer, S.⁴

7
- 0003610719
- (Wiley, New York).
- E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982).
- (1982) MOS (Metal Oxide Semiconductor) Physics and Technology
- Nicollian, E.H.¹ Brews, J.R.²

8
- 77955738493
- 0003-6951, 10.1063/1.3479047
- R. Engel-Herbert, Y. Hwang, and S. Stemmer, Appl. Phys. Lett. 0003-6951 97, 062905 (2010). 10.1063/1.3479047
- (2010) Appl. Phys. Lett. , vol.97 , pp. 062905
- Engel-Herbert, R.¹ Hwang, Y.² Stemmer, S.³

9
- 33645565246
- 0948-1907, 10.1002/cvde.200500023
- A. C. Jones, H. C. Aspinall, P. R. Chalker, R. J. Potter, T. D. Manning, Y. F. Loo, R. O'Kane, J. M. Gaskell, and L. M. Smith, Chem. Vap. Deposition 0948-1907 12, 83 (2006). 10.1002/cvde.200500023
- (2006) Chem. Vap. Deposition , vol.12 , pp. 83
- Jones, A.C.¹ Aspinall, H.C.² Chalker, P.R.³ Potter, R.J.⁴ Manning, T.D.⁵ Loo, Y.F.⁶ O'Kane, R.⁷ Gaskell, J.M.⁸ Smith, L.M.⁹

10
- 0035557331
- Materials Research Society Symposia Proceedings No. 670 (MRS, Warrendale, PA, USA)
- W. L. Gladfelter, R. C. Smith, D. Burleson, C. J. Taylor, J. T. Roberts, S. A. Campbell, N. Hoilien, M. Tiner, R. Hegde, and C. Hobbs, Gate Stack and Silicide Issues in Silicon Processing II, Materials Research Society Symposia Proceedings No. 670 (MRS, Warrendale, PA, USA, 2001), p. K4.1.1.
- (2001) Gate Stack and Silicide Issues in Silicon Processing II , pp. 411
- Gladfelter, W.L.¹ Smith, R.C.² Burleson, D.³ Taylor, C.J.⁴ Roberts, J.T.⁵ Campbell, S.A.⁶ Hoilien, N.⁷ Tiner, M.⁸ Hegde, R.⁹ Hobbs, C.¹⁰

11
- 77956215145
- 1099-0062, 10.1149/1.3407618
- A. Dabirian, Y. Kuzminykh, B. Afra, S. Harada, E. Wagner, C. S. Sandu, G. Benvenuti, S. Rushworth, P. Muralt, and P. Hoffmann, Electrochem. Solid-State Lett. 1099-0062 13, G60 (2010). 10.1149/1.3407618
- (2010) Electrochem. Solid-State Lett. , vol.13 , pp. 60
- Dabirian, A.¹ Kuzminykh, Y.² Afra, B.³ Harada, S.⁴ Wagner, E.⁵ Sandu, C.S.⁶ Benvenuti, G.⁷ Rushworth, S.⁸ Muralt, P.⁹ Hoffmann, P.¹⁰

12
- 77954195474
- 0021-9606, 10.1063/1.3427584
- J. B. Clemens, S. R. Bishop, J. S. Lee, A. C. Kummel, and R. Droopad, J. Chem. Phys. 0021-9606 132, 244701 (2010). 10.1063/1.3427584
- (2010) J. Chem. Phys. , vol.132 , pp. 244701
- Clemens, J.B.¹ Bishop, S.R.² Lee, J.S.³ Kummel, A.C.⁴ Droopad, R.⁵

13
- 78049314956
- 0021-9606, 10.1063/1.3487737
- J. B. Clemens, E. A. Chagarov, M. Holland, R. Droopad, J. A. Shen, and A. C. Kummel, J. Chem. Phys. 0021-9606 133, 154704 (2010). 10.1063/1.3487737
- (2010) J. Chem. Phys. , vol.133 , pp. 154704
- Clemens, J.B.¹ Chagarov, E.A.² Holland, M.³ Droopad, R.⁴ Shen, J.A.⁵ Kummel, A.C.⁶

14
- 65249175032
- 0003-6951, 10.1063/1.3113523
- H. C. Lin, G. Brammertz, K. Martens, G. de Valicourt, L. Negre, W. E. Wang, W. Tsai, M. Meuris, and M. Heyns, Appl. Phys. Lett. 0003-6951 94, 153508 (2009). 10.1063/1.3113523
- (2009) Appl. Phys. Lett. , vol.94 , pp. 153508
- Lin, H.C.¹ Brammertz, G.² Martens, K.³ De Valicourt, G.⁴ Negre, L.⁵ Wang, W.E.⁶ Tsai, W.⁷ Meuris, M.⁸ Heyns, M.⁹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.