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Volumn 98, Issue 14, 2011, Pages

Al-doped HfO2/In0.53Ga0.47 As metal-oxide-semiconductor capacitors

(6) Hwang, Yoontae a Chobpattana, Varistha a Zhang, Jack Y a Lebeau, James M b Engel Herbert, Roman c Stemmer, Susanne a

a University of California (United States)

b North Carolina State University (United States)

c PENNSYLVANIA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CODEPOSITION; EQUIVALENT OXIDE THICKNESS; INTERFACE TRAP DENSITY; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; OXIDE GATE DIELECTRICS; PHYSICAL THICKNESS; TRIMETHYLALUMINUM;

AMORPHOUS FILMS; CAPACITORS; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM OXIDES;

GATE DIELECTRICS;

EID: 79954522262 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3575569 Document Type: Article

Times cited : (26)

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