Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

Semiconductor Science and Technology

Volumn 26, Issue 9, 2011, Pages

  Pu, Haifeng ^a   Li, Guifeng ^a   Feng, Jiahan ^a   Liu, Baoying ^a   Zhang, Qun ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS INDIUM ZINC OXIDE (A-IZO); ANTI-REFLECTION EFFECTS; CHANNEL LAYERS; DIELECTRIC LAYER; DOUBLE LAYER STRUCTURE; ELECTRICAL PERFORMANCE; GATE DIELECTRIC LAYERS; INDIUM ZINC OXIDES; LOW TEMPERATURES; ON/OFF RATIO; POST HEAT-TREATMENT; SATURATION MOBILITY; SUBTHRESHOLD SWING; TRANSMISSION CURVE;

AMORPHOUS FILMS; DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; ZINC; ZINC OXIDE;

INDIUM;

EID: 80052017543     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/9/095004     Document Type: Article

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