Design of higher-k and more stable rare earth oxides as gate dielectrics for advanced CMOS devices

Materials

Volumn 5, Issue 8, 2012, Pages 1413-1438

  Zhao, Yi ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Crystallization temperature; Gate dielectrics; Hafnium oxide; Hygroscopic tolerance; Lanthanum oxide; Permittivity; Ternary oxides

Indexed keywords

ADVANCED CMOS DEVICE; CRYSTAL BOUNDARY; CRYSTALLIZATION BEHAVIOR; CRYSTALLIZATION TEMPERATURE; GATE OXIDE; GATE-LEAKAGE CURRENT; HIGH PERMITTIVITY; HIGH-K GATE OXIDE; HIGH-K OXIDES; MATERIAL PROPERTY; RARE EARTH OXIDE; RECENT PROGRESS; TERNARY OXIDES; THEORETICAL STUDY; ULTRA-THIN;

AMORPHOUS FILMS; CMOS INTEGRATED CIRCUITS; DESIGN; DIELECTRIC FILMS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM OXIDES; LANTHANUM OXIDES; MOS DEVICES; OXIDE FILMS; PERMITTIVITY; RARE EARTHS;

LANTHANUM;

EID: 84866168465     PISSN: None     EISSN: 19961944     Source Type: Journal    
DOI: 10.3390/ma5081413     Document Type: Article

References (43)

1. Gonzales-Elipe, A.R.; Espinos, J.P.; Fernandez, A.; Munuera, G. XPS study of the surface carbonation/hydroxylation state of metal oxides. Appl. Surf. Sci. 1990, 45, 103-108.
2. Iwai, H.; Ohmi, S.I.; Akama, S.; Ohshima, C.; Kikuchi, A.; Kashiwagi, I.; Taguchi, J.; Yamamoto, H.; Tonotani, J.; Kim, Y.; et al. Advanced gate dielectric materials for sub-100 nm CMOS. In Proceeding of International Electron Devices Meeting, 2002. IEDM '02, San Francisco, CA, USA, 8-11 December 2002.
3. Wolf, S. Deep-Submicron Process Technology. In Silicon Processing for The VLSI Era; Lattice Press: Sunset Beach, CA, USA, 2002; Volume 4.
4. Devine, R.A.B. Infrared and electrical properties of amorphous sputtered (LaxAl1-x)2O3 films. J. Appl. Phys. 2003, 93, 9938-9942.
5. Yamada, H.; Shmizu, T.; Kurokawa, A.; Ishii, K.; Suzuki, E. MOCVD of high-dielectric-constant lanthanum oxide thin films. J. Electrochem. Soc. 2003, 150, G429-G435.
6. Jin, H.J.; Choi, D.J.; Kim, K.H.; Oh, K.Y.; Hwang, C.J. Effect of structural properties on electrical properties of lanthanum oxide thin film as a gate dielectric. Jpn. J. Appl. Phys. 2003, 42, 3519-3522.
7. Shannon, R.D. Dielectric polarizabilities of ions in oxides and fluorides. J. Appl. Phys. 1993, 73, 348-366.
8. Koehler, W.C.; Wollan, E.O. Neutron-diffraction study of the structure of the A-form of the rare earth sesquioxides. Acta Crystallogr. 1953, 6, 741-742.
9. 3 gate dielectrics with equivalent oxide thickness 5-10 Å. In Proceeding of the VLSI Technology, Digest of Technical Papers, Honolulu, HI, USA, 2000; doi:10.1109/VLSIT.2000.852751.
10. Yokogawa, Y.; Yoshimura, M.; Somiya, S. Lattice energy and polymorphism of rare-earth oxides. J. Mater. Sci. Lett. 1991, 10, 509-511.
11. Kapustinskii, A.F. Lattice energy of ionic crystals. Quart. Rev. Chem. Soc. 1956, 10, 283-294.
12. Ohni, S.; Akama, S.; Kikuchi, A.; Kashiwagi, I.; Oshima, C.; Taguchi, J.; Yamamoto, H.; Kobayashi, C.; Sato, K.; Tageda, M.; et al. Rare earth metal oxide gate thin films prepared by E-beam deposition. In Proceeding of Extended Abstracts of International Workshop on Gate Insulator, 2001. IWGI 2001, Tokyo, Japan, 1-2 November 2001.
13. 3-Y2O3 at high temperature. Yogyo Kyokaishi 1976, 84, 342-348.
14. Navrotsky, A. Thermochemical insights into refractory ceramic materials based on oxides with large tetravalent cations. J. Mater. Chem. 2005, 15, 1883-1890.
15. Zhao, Y.; Kita, K.; Toriumi, A. Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices. Appl. Phys. Lett. 2010, 96, 242901:1-242901:3.
16. Mortimer, R.G. Physical Chemistry, 2nd ed.; Academic Press: New York, NY, USA, 2000.
17. Vasil'ev, V.P.; Lytkin, A.I.; Chernyavskaya, N.V. Thermodynamic characteristics of zirconium and hafnium hydroxides in aqueous. J. Therm. Anal. Calorim. 1999, 55, 1003-1009.
18. 5 series. Surface Sci. 1993, 87, 699-703.
19. Wilk, G.D.; Wallace, R.M.; Anthony, J.M. High-k gate dielectrics: Current status and materials properties considerations. J. Appl. Phys. 2001, 89, 5243-5275.
20. 3 as high-k gate insulators. Appl. Phys. Lett. 2009, 94, 042901:1-042901:3.
21. Zhao, Y.; Kita, K.; Kyuno, K.; Toriumi, A. Higher-k LaYOx films with strong moisture-resistance. Appl. Phys. Lett. 2006, 89, 252905:1-252905:3.
22. 3 films with ultraviolet ozone post treatment. Jpn. J. Appl. Phys. 2007, 46, 4189-4192.
23. 2 interface. Appl. Phys. Lett. 2009, 94, 132902:1-132902:3.
24. Song, W.J.; So, S.K.; Wang, D.Y.; Qiu, Y.; Cao, L.L. Angle dependent X-ray photoemission study on UV-ozone treatments of indium tin oxide. Appl. Surf. Sci. 2001, 177, 158-164.
25. Zhao, Y.; Toyama, M.; Kita, K.; Kyuno, K.; Toriumi, A. Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon. Appl. Phys. Lett. 2006, 88, 072904:1-072904:3.
26. Wang, X.P.; Li, M.F.; Ren, C.; Yu, X.F.; Shen, C.; Ma, H.H.; Chin, A.; Zhu, C.X.; Ning, J.; Yu, M.B.; et al. Tuning effective metal gate work function by a novel gate dielectric HfLaOx for nMOSFETs. IEEE Electron Dev. Lett. 2006, 27, 31.
27. Yamamoto, Y.; Kita, K.; Kyuno, K.; Toriumi, A. Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator. Appl. Phys. Lett. 2006, 89, 032903:1-032903:3.
28. 2 gate oxide replacement. Mater. Sci. Eng. B 2004, 109, 85-88.
29. 5 thin films for dynamic random access memory applications. J. Appl. Phys. 1999, 86, 871:1-871:10.
30. Shishido, T.; Okamura, K.; Yayima, S. Ln-M-O glasses obtained by rapid quenching using a laser beam. J. Mater. Sci. 1978, 13, 1006-1014.
31. 2 through structural phase transformation. Appl. Phys. Lett. 2005, 86, 102906:1-102906:3.
32. Bottcher, C.J.F. Theory of Electronic Polarization; Elsevier Science Publisher: Amsterdam, The Netherlands, 1973.
33. 3 sesquioxides. J. Alloys Compd. 2003, 351, 31-34.
34. Coutures, J.; Rouanent, A.; Verges, R.; Foex, M. Etude a haute temperature des systems formes par le sesquioxyde de lanthane et les sesquioxydes de lanthanides. I. Diagrammes de phases (1400 deg;C < T < T liquide). J. Solid State Chem. 1976, 17, 171-182.
35. Manchanda, L.; Morris, M.D.; Green, M.L.; Dover, R.B.; Klemens, F.; Sorsch, T.W.; Silverman, P.J.; Wilk, G.D.; Busch, B.; Aravamudhan, S. Multi-component high-k gate dielectrics for the silicon industry. Microelectron. Eng. 2001, 59, 351-359.
36. Pisecny, P.; Husekova, K.; Frohlich, K.; Harmatha, L.; Soltys, J.; Machajdik, D.; Espinos, J.P.; Jergel, M.; Jakabovic, J. Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology. Mater. Sci. Semicond. Process. 2004, 7, 231-236.
37. 5 films. Jpn. J. Appl. Phys. 2005, 44, 1941-1942.
38. Ushakov, S.V.; Brown, C.E.; Navrotsky, A. Effect of La and Y on crystallization temperature of hafnia and zirconia. J. Mater. Res. 2004, 19, 693-696.
39. Yajima, S.; Okayama, K.; Shishido, T. Glass formation in the Ln-Al-O system. Chem. Lett. 1973, 1327-1330.
40. Gusev, E.P.; Narayanan, V.; Frank, M.M. Advanced high-k dielectric stacks with PolySi and metal gates: Recent progress and current challenges. IBM J. Res. Develop. 2006, 50, 387-410.
41. 3 Gate Insulator Film with EOTs of 0.8~1.2 nm. In Proceeding of 2001 Extended Abstracts of International Conference on Solid State Device and Materials (SSDM), Tokyo, Japan, 22-24 September 2001.
42. 5 Thin Film. Jpn. J. Appl. Phys. Part 1 2003, 42, 3161-3165.
43. Li, H.J.; Price, J.; Gardner, M.; Lu, N.; Kwong, D.L. High permittivity quaternary metal (HfTaTiOx) oxide layer as an alternative high-k gate dielectric. Appl. Phys. Lett. 2006, 89, 103523:1-103523:3.