Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology

Materials Science in Semiconductor Processing

Volumn 7, Issue 4-6 SPEC. ISS., 2004, Pages 231-236

  Pisecny, P ^a,b   Husekova, K ^a   Frohlich, K ^a   Harmatha, L ^b   Soltys, J ^a   Machajdik, D ^a   Espinos, J P ^c   Jergel, M ^d   Jakabovic, J ^b  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^c INSTITUTO DE CIENCIA DE MATERIALES DE SEVILLA   (Spain)

^d INSTITUTE OF PHYSICS   (Slovakia)

Author keywords

High dielectric; Lanthanum oxide; MOCVD; MOS structure

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; GATES (TRANSISTOR); INTERFACES (MATERIALS); LANTHANUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; PHOTOEMISSION; SEMICONDUCTING SILICON; X RAY DIFFRACTION ANALYSIS;

GATE DIELECTRICS; LANTHANUM OXIDE FILMS; VACUUM EVAPORATION;

CMOS INTEGRATED CIRCUITS;

EID: 9544231697     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.020     Document Type: Conference Paper

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