Effects of stress annealing in nitrogen on the index of refraction of silicon dioxide layers in metal-oxide-semiconductor devices

Journal of Applied Physics

Volumn 92, Issue 4, 2002, Pages 2202-2206

  Massoud, Hisham Z ^a   Przewlocki, Henryk M ^b  

^a Duke University   (United States)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING CONDITION; ANNEALING TIME; EXPERIMENTAL OBSERVATION; HIGH TEMPERATURE STRESS; INDEX OF REFRACTION; MECHANICAL STRESS; METAL OXIDE SEMICONDUCTOR; OXIDE THICKNESS; PROCESSING CONDITION; SILICON DIOXIDE LAYERS; STRESS-ANNEALING;

ANNEALING; ELECTRIC PROPERTIES; MECHANICAL PROPERTIES; NITROGEN; REFRACTIVE INDEX; STRESSES;

MOS DEVICES;

EID: 0037103481     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1489500     Document Type: Article

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