Improved electrical stability in the al doped ZnO thin-film-transistors grown by atomic layer deposition

Journal of the Electrochemical Society

Volumn 158, Issue 2, 2011, Pages

  Ahn, Cheol Hyoun ^a   Kong, Bo Hyun ^a   Kim, Hyoungsub ^a   Cho, Hyung Koun ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION OF AL; AL-DOPED ZNO; ALD GROWTH; AZO FILMS; CHANNEL LAYERS; CRYSTAL SIZE; ELECTRICAL STABILITY; FIELD-EFFECT MOBILITIES; GATE OXIDE; LOW TEMPERATURES; NON-POLAR; OFF CURRENT; POSITIVE GATE BIAS; PREFERRED ORIENTATIONS; PURE ZNO; TRANSFER CURVES;

ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMS; CRYSTAL ORIENTATION; DOPING (ADDITIVES); HYSTERESIS; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 78650755669     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3525278     Document Type: Article

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