SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 95, Issue , 2012, Pages 107-111

Laser ablation of amorphous indium gallium zinc oxide films deposited by different RF powers

(3) Wang, Jian Xun a Kwon, Sang Jik a Cho, Eou Sik a

a Gachon University (South Korea)

Author keywords

Amorphous indium gallium zinc oxide (a IGZO); Laser ablation; RF sputtering power

Indexed keywords

ABSORPTION COEFFICIENTS; AMORPHOUS-INDIUM GALLIUM ZINC OXIDE (A-IGZO); ATOMIC PERCENTAGE; INDIUM GALLIUM ZINC OXIDES; LASER ETCHING; LASER PROCESSING CONDITIONS; PATTERNING PROCESS; RADIO-FREQUENCY SPUTTERING; REPETITION RATE; RF POWER; RF-SPUTTERING; SCANNING SPEED; TRANSPARENT OXIDE SEMICONDUCTOR; YTTRIUM VANADATE;

AMORPHOUS SEMICONDUCTORS; LASER ABLATION; NEODYMIUM; OXIDE FILMS; PHOTOLITHOGRAPHY; YTTRIUM;

AMORPHOUS FILMS;

EID: 84860366839 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2012.02.003 Document Type: Article

Times cited : (4)

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