Epitaxial growth of Sc-doped ZnO films on Si by sol-gel route

Applied Surface Science

Volumn 255, Issue 11, 2009, Pages 5781-5788

  Sharma, Ruchika ^a   Sehrawat, Kiran ^b   Wakahara, Akihiro ^c   Mehra, R M ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

^c TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Annealing; Morphology; Photoluminescence; Scandium; Sol gel; Zinc oxide

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; DOPING (ADDITIVES); ETHANOLAMINES; II-VI SEMICONDUCTORS; METALLIC FILMS; MORPHOLOGY; OSTWALD RIPENING; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANDIUM; SCANDIUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SILICON; SOL-GEL PROCESS; SOL-GELS; SURFACE ROUGHNESS; X RAY DIFFRACTION; ZINC OXIDE;

ANNEALING TEMPERATURES; C-AXIS ORIENTED FILM; FULL WIDTH HALF MAXIMUM; PHOTOLUMINESCENCE PROPERTIES; ROOM-TEMPERATURE PHOTOLUMINESCENCE; STRUCTURAL INVESTIGATION; X-RAY DIFFRACTION STUDIES; ZINC ACETATE DIHYDRATE;

EPITAXIAL GROWTH;

EID: 60949099317     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.01.004     Document Type: Article

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