Improvement of resistive switching uniformity by introducing a thin GST interface layer

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 978-980

  Lv, Hangbing ^a   Wan, Haijun ^b   Tang, Tingao ^b  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b FUDAN UNIVERSITY   (China)

Author keywords

Confined filament; resistive random access memory (RRAM); resistive switching

Indexed keywords

CONFINED FILAMENT; FILAMENTARY CONDUCTION; INTERFACE LAYER; OPERATION PARAMETERS; PHASE CHANGES; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING;

COPPER; FILAMENTS (LAMP); GERMANIUM; RANDOM ACCESS STORAGE; SWITCHING SYSTEMS; TELLURIUM COMPOUNDS;

SWITCHING;

EID: 77956171848     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2055534     Document Type: Article

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