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Volumn 63, Issue 1, 2011, Pages 1-4

Pt/Ti/Al2O3/Al tunnel junctions exhibiting electroforming-free bipolar resistive switching behavior

Author keywords

Memory device; Resistive switching; RRAM

Indexed keywords

ALUMINA; ALUMINUM OXIDE; DATA STORAGE EQUIPMENT; ELECTROCHEMISTRY; ELECTROFORMING; ELECTROMETALLURGY; PLATINUM COMPOUNDS; RANDOM ACCESS STORAGE; RRAM; SWITCHING; TITANIUM;

EID: 80051788956     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.05.028     Document Type: Letter
Times cited : (27)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.