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Volumn 63, Issue 1, 2011, Pages 1-4
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Pt/Ti/Al2O3/Al tunnel junctions exhibiting electroforming-free bipolar resistive switching behavior
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Author keywords
Memory device; Resistive switching; RRAM
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Indexed keywords
ALUMINA;
ALUMINUM OXIDE;
DATA STORAGE EQUIPMENT;
ELECTROCHEMISTRY;
ELECTROFORMING;
ELECTROMETALLURGY;
PLATINUM COMPOUNDS;
RANDOM ACCESS STORAGE;
RRAM;
SWITCHING;
TITANIUM;
BIPOLAR SWITCHING;
COMPLIANCE CURRENT;
LOW-RESISTANCE STATE;
MULTILEVELS;
RESISTANCE VALUES;
RESISTIVE SWITCHING;
RESISTIVE SWITCHING BEHAVIORS;
TUNNEL BARRIER;
TUNNEL JUNCTIONS;
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EID: 80051788956
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/j.sse.2011.05.028 Document Type: Letter |
Times cited : (27)
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References (18)
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