Bipolar resistive switching of chromium oxide for resistive random access memory

Solid-State Electronics

Volumn 62, Issue 1, 2011, Pages 40-43

  Chen, Shih Cheng ^a   Chang, Ting Chang ^b,c   Chen, Shih Yang ^a   Chen, Chi Wen ^b   Chen, Shih Ching ^b   Sze, S M ^d   Tsai, Ming Jinn ^e   Kao, Ming Jer ^e   Yeh, Fon Shan ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^e INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Cr2O3 thin film; Nonvolatile memory; Resistance switching

Indexed keywords

CHROMIUM OXIDES; CR2O3 THIN FILM; FORMING PROCESS; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; NON-VOLATILE MEMORIES; OXYGEN MIGRATION; OXYGEN RESERVOIR; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE RATIO; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RETENTION PROPERTIES; SWITCHING BEHAVIORS;

AUGER ELECTRON SPECTROSCOPY; CHROMIUM; NONVOLATILE STORAGE; OXYGEN; PLATINUM; SWITCHING; SWITCHING SYSTEMS; TITANIUM NITRIDE;

RANDOM ACCESS STORAGE;

EID: 79957945629     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.12.014     Document Type: Article

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