Criterion to evaluate input-Offset voltage of a latch-Type sense amplifier

IEEE Transactions on Circuits and Systems I: Regular Papers

Volumn 57, Issue 1, 2010, Pages 83-92

  Do, Anh Tuan ^a   Kong, Zhi Hui ^a   Yeo, Kiat Seng ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Latch type sense amplifier; Mismatch; Sensing circuit; SRAM

Indexed keywords

CMOS INTEGRATED CIRCUITS; STATIC RANDOM ACCESS STORAGE; THRESHOLD VOLTAGE;

CMOS TECHNOLOGY; EXTENSIVE SIMULATIONS; MISMATCH; SECOND-ORDER APPROXIMATION; SENSE AMPLIFIER; SENSING CIRCUITS; TAYLOR EXPANSIONS; WORST CASE SCENARIO;

CAPACITANCE;

EID: 84865690072     PISSN: 15498328     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCSI.2009.2016182     Document Type: Article

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