A kinetic simulation study of the mechanisms of aluminum induced layer exchange process

Journal of Applied Physics

Volumn 107, Issue 11, 2010, Pages

  Sarikov, Andrey ^a   Schneider, Jens ^b   Berghold, Juliane ^b,c   Muske, Martin ^b   Sieber, Ina ^b   Gall, Stefan ^b,c   Fuhs, Walther ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b HAHN MEITNER INSTITUT   (Germany)

^c CSG Solar ^*  (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM-INDUCED LAYER EXCHANGE; EXPERIMENTAL DATA; FOREIGN SUBSTRATES; KINETIC SIMULATION; LARGE-GRAIN; LOW PROCESS TEMPERATURE; NUCLEATION AND GROWTH; POLY-SI; POLYCRYSTALLINE-SI; SI CONCENTRATION; SI DIFFUSION;

ALUMINUM; NUCLEATION; POLYSILICON;

COMPUTER SIMULATION;

EID: 77953645667     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3431385     Document Type: Article

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