Low-temperature, low-pressure chemical vapor deposition and solid phase crystallization of silicon-germanium films

Journal of the Electrochemical Society

Volumn 156, Issue 1, 2009, Pages

  Tada, Munehiro ^a,b   Park, Jin Hong ^a   Jain, Jinendra Raja ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BICMOS TECHNOLOGY; CHEMICAL VAPOR DEPOSITION; DEPOSITION RATES; DISTRIBUTED PARAMETER NETWORKS; GERMANIUM; METALLIC GLASS; SEMICONDUCTING SILICON COMPOUNDS; SILANES; SILICON; STATISTICAL PROCESS CONTROL; VAPORS;

CHAMBER PRESSURES; COMPOSITIONAL EFFECTS; CONVERSION FACTORS; DECOMPOSITION RATES; DEPOSITION CONDITIONS; DEPOSITION MECHANISMS; DEPOSITION PROCESSES; DEPOSITION TEMPERATURES; FILM COMPOSITIONS; HIGH DEPOSITION RATES; PHASE CRYSTALLIZATIONS; PRECURSOR RATIOS; SIGE FILMS; SILICON GERMANIUMS; SOURCE GASSES; TUN ABILITIES;

DEPOSITION;

EID: 56749152013     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3008009     Document Type: Article

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