SCOPUS 정보 검색 플랫폼

Volumn 520, Issue 18, 2012, Pages 5860-5866

Direct growth of large grain polycrystalline silicon films on aluminum-induced crystallization seed layer using hot-wire chemical vapor deposition

(7) Wu, Bing Rui a Lo, Shih Yung a Wuu, Dong Sing a,b Ou, Sin Liang a Mao, Hsin Yuan a Wang, Jui Hao a Horng, Ray Hua a

a NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

b DA YEH UNIVERSITY (Taiwan)

Author keywords

Aluminum induced crystallization; Electron microscopy; Grain size; Hot wire chemical vapor deposition; Polycrystalline Si; Raman spectroscopy; Seed layer

Indexed keywords

ALUMINUM-INDUCED CRYSTALLIZATION; GRAIN SIZE; HOT WIRE CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE-SI; SEED LAYER;

ALUMINUM; ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; ELECTRON MICROSCOPY; GRAIN GROWTH; GRAIN SIZE AND SHAPE; POLYCRYSTALLINE MATERIALS; POLYSILICON; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SUBSTRATES; VAPORS; WIRE;

ALUMINUM COATINGS;

EID: 84862217019 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2012.05.009 Document Type: Article

Times cited : (23)

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