On the controlling mechanism of preferential orientation of polycrystalline-silicon thin films grown by aluminum-induced crystallization

Applied Physics Express

Volumn 3, Issue 9, 2010, Pages

  Jung, Mina ^a   Okada, Atsushi ^b   Saito, Takanobu ^b   Suemasu, Takashi ^b   Usami, Noritaka ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM-INDUCED CRYSTALLIZATION; AMORPHOUS SILICON (A-SI); CONTROLLING MECHANISM; CRYSTAL GRAINS; ELECTRON BACK-SCATTERED DIFFRACTION; EPITAXIAL RELATIONSHIPS; GLASS SUBSTRATES; IN-SITU MONITORING; INDUCED CRYSTALLIZATION; LAYER EXCHANGE; POLY-SI; POLY-SI FILMS; POLYCRYSTALLINE; POLYCRYSTALLINE SILICON (POLY-SI); PREFERENTIAL ORIENTATION; SILICON THIN FILM; SURFACE ENERGIES;

ALUMINUM; AMORPHOUS FILMS; CRYSTALLIZATION; EPITAXIAL GROWTH; POLYCRYSTALLINE MATERIALS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; SURFACE CHEMISTRY;

AMORPHOUS SILICON;

EID: 77956752898     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.095803     Document Type: Article

References (19)

1. S. D. Brotherton, J. R. Ayres, and N. D. Young: Solid-State Electron. 34 (1991) 671.
2. O. Nast, T. Puzzer, L. M. Koschier, A. B. Sproul, and S. R. Wenham: Appl. Phys. Lett. 73 (1998) 3214.
3. R. B. Bergmann, G. Oswald, M. Albrecht, and V. Gross: Sol. Energy Mater. Sol. Cells 46 (1997) 147.
4. T. Matsuyama, N. Terada, T. Baba, T. Sawada, S. Tsuge, K. Wakisaka, and S. Tsuda: J. Non-Cryst. Solids 198-200 (1996) 940.
5. K. Ishikawa, M. Ozawa, C.-H. Oh, and M. Matsumura: Jpn. J. Appl. Phys. 37 (1998) 731.
6. B. Bian, J. Yie, B. Li, and Z. Wu: J. Appl. Phys. 73 (1993) 7402.
7. L. Hultman, A. Robertson, H. T. G. Hentzell, I. Engstrom, and P. A. Psaras: J. Appl. Phys. 62 (1987) 3647.
8. G. Radnoczi, A. Robertsson, H. T. G. Hentzell, S. F. Gong, and M.-A. Hasan: J. Appl. Phys. 69 (1991) 6394.
9. O. Nast and S. R. Wenham: J. Appl. Phys. 88 (2000) 124.
10. G. Willeke, H. Nussbaumer, H. Bender, and E. Bucher: Sol. Energy Mater. Sol. Cells 26 (1992) 345.
11. D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami, and T. Suemasu: J. Cryst. Growth 311 (2009) 3581.
12. K.Morita, Y. Inomata, and T. Suemasu: Thin Solid Films 508 (2006) 78.
13. S. Gall, J. Schneider, J. Klein, K. Hübener, M. Muske, B. Rau, E. Conrad, I. Sieber, K. Petter, K. Lips, M. Stöger-Pollach, P. Schattschneider, and W. Fuhs: Thin Solid Films 511 (2006) 7.
14. Y. Sugimoto, N. Takata, T. Hirota, K. Ikeda, F. Yoshida, H. Nakashima, and H. Nakashima: Jpn. J. Appl. Phys. 44 (2005) 4770.
15. M. Kurosawa, N. Kawabata, T. Sadoh, and M. Miyao: Appl. Phys. Lett. 95 (2009) 132103.
16. J. Schneider, A. Sarikov, J. Klein, M. Muske, I. Sieber, T. Quinn, H. S. Reehal, S. Gall, and W. Fuhs: J. Cryst. Growth 287 (2006) 423.
17. K. Fujiwara, K. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguchi, and K. Nakajima: J. Cryst. Growth 243 (2002) 275.
18. P. A. Apte and X. C. Zeng: Appl. Phys. Lett. 92 (2008) 221903.
19. Y. Azuma, N. Usami, K. Fujiwara, T. Ujihrara, and K. Nakajima: J. Cryst. Growth 276 (2005) 393.