Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth

Solid-State Electronics

Volumn 60, Issue 1, 2011, Pages 7-12

  Kurosawa, Masashi ^a,b   Toko, Kaoru ^a,b   Kawabata, Naoyuki ^a   Sadoh, Taizoh ^a   Miyao, Masanobu ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE   (Japan)

Author keywords

Al induced crystallization; Ge; Liquid phase epitaxy; Orientation control; Si

Indexed keywords

AL OXIDE; CRYSTAL SEEDS; GE; HETEROEPITAXY; HIGH QUALITY; INDUCED CRYSTALLIZATION; INSULATING SUBSTRATES; NUCLEATION MODELS; NUCLEATION SITES; ORIENTATION CONTROL; QUARTZ SUBSTRATE; SI; SI FILMS;

ALUMINUM; CRYSTAL ORIENTATION; CRYSTALLIZATION; EPITAXIAL FILMS; EPITAXIAL GROWTH; GERMANIUM; LIQUID PHASE EPITAXY; LIQUIDS; NUCLEATION; QUARTZ; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79955524774     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.01.033     Document Type: Article

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