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Applied Physics Letters

Volumn 97, Issue 8, 2010, Pages

Interface-controlled layer exchange in metal-induced crystallization of germanium thin films

(3) Hu, Shu a Marshall, Ann F b McIntyre, Paul C a,b

a Stanford University (United States)

b STANFORD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; ELECTRONICS APPLICATIONS; GE THIN FILMS; INDUCED CRYSTALLIZATION; INTERFACIAL DIFFUSION; LATERAL OVERGROWTH; LAYER EXCHANGE; LOW TEMPERATURE SYNTHESIS; METAL-INDUCED CRYSTALLIZATION; POLYCRYSTALLINE GERMANIUM; POLYMER SUBSTRATE; PREFERRED ORIENTATIONS;

ALUMINUM; AMORPHOUS MATERIALS; CRYSTALLIZATION; POLYMER FILMS; THIN FILMS; VAPOR DEPOSITION;

GERMANIUM;

EID: 77956214731 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3480600 Document Type: Article

Times cited : (75)

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