A very low temperature single crystal germanium growth process on insulating substrate using Ni-induced lateral crystallization for three-dimensional integrated circuits

Applied Physics Letters

Volumn 91, Issue 14, 2007, Pages

  Park, Jin Hong ^a   Kapur, Pawan ^a   Saraswat, Krishna C ^a   Peng, Hailin ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM FILMS; MICROCRYSTALS PLAGUES; OPTIMUM ANNEALING TEMPERATURES; PATTERNED NANOWIRES; SINGLE CRYSTAL GERMANIUM GROWTH PROCESS;

ANNEALING; CRYSTALLIZATION; INSULATING MATERIALS; INTEGRATED CIRCUITS; METALLIC FILMS; NANOWIRES; TRANSISTORS;

SINGLE CRYSTALS;

EID: 34948851463     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2793183     Document Type: Article

References (6)

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