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Applied Physics A: Materials Science and Processing

Volumn 105, Issue 4, 2011, Pages 855-860

Self-learning ability realized with a resistive switching device based on a Ni-rich nickel oxide thin film

(7) Liu, Y a,b Chen, T P b Liu, Z b Yu, Y F a Yu, Q a Li, P a Fung, S c

a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (China)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

c UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PULSE; HIGH-RESISTANCE STATE; HUMAN BRAIN; LEARNING ABILITIES; LOW-RESISTANCE STATE; NEUROPLASTICITY; NICKEL OXIDE THIN FILMS; RESISTIVE SWITCHING; SELF-LEARNING ABILITY;

NEURAL NETWORKS; SWITCHING SYSTEMS; THIN FILMS;

NICKEL OXIDE;

EID: 83555172303 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-011-6605-8 Document Type: Article

Times cited : (10)

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